Semiconductor device and method of manufacturing the same
View Patent ↗A semiconductor device has plural columnar gate electrodes for plural MOSFETs formed in a row separately on a semiconductor substrate, and a semiconductor region which is formed in a part between the neighboring two columnar gate electrodes of the plural columnar gate electrodes to form a channel of the MOSFETs.
1. A semiconductor device, comprising:
plural columnar gate electrodes for plural MOSFETs formed in a row separately on a semiconductor substrate;
a semiconductor region which is formed in a part between the neighboring two columnar gate electrodes of the plural columnar gate electrodes to form a channel of the MOSFETs;
a source region disposed along one side of the row of the plural columnar gate electrodes; and
a drain region disposed along another side of the row of the plural columnar gate electrodes.
2. The semiconductor device according to claim 1 , further comprising:
a gate sidewall film which is formed in a part between the neighboring two columnar gate electrodes and has a thickness larger than a half of width of an interval between the neighboring two columnar gate electrodes.
3. The semiconductor device according to claim 1 ,
wherein the semiconductor substrate is an SOI substrate.
4. The semiconductor device according to claim 1 ,
wherein the semiconductor substrate is a bulk substrate.
5. The semiconductor device according to claim 1 ,
wherein each of the plural columnar gate electrodes is a round pillar.
6. The semiconductor device according to claim 1 ,
wherein each of the plural columnar gate electrodes is an ellipse pillar.
7. The semiconductor device according to claim 1 ,
wherein each of the plural columnar gate electrodes is a square pillar.