CMP slurry composition and a method for planarizing semiconductor device using the same

1. A CMP (chemical mechanical polishing) composition comprising;

(a) fumed silica;

(b) TMAH (tetra methyl ammonium hydroxide);

(c) phosphate anionic additives selected from the group consisting of phosphate esters, polyphosphate esters, and phosphate anionic additives containing a fluorocarbon group;

(d) fluorine compounds; and

(e) deionized water.

2. The CMP composition according to claim 1 , wherein the fumed silica has a primary particle diameter of 10 to 50 nm.

3. The CMP composition according to claim 1 , wherein the content of the fumed silica is 3 to 30 wt %.

4. The CMP composition according to claim 1 , wherein the fumed silica contains less than 70 ppm of metal impurities.

5. The CMP composition according to claim 1 , wherein the content of the TMAH is 0.01 to 5 wt %.

6. The CMP composition according to claim 1 , further comprising primary amines, secondary amines, tertiary amines, quaternary amines, quaternary ammonium salts or heterocyclic amines selected from the group consisting of ethanol amine, isopropyl amine, dipropyl amine, ethylene diamine(EDA), propane diamine, hexamethylenediamine, hydrazine compound, tetramethyl ammonium fluoride (TMAF), TMAH, tetra methyl ammonium chloride(TMA-CI), tetraethyl ammonium hydroxide(TEAH), tetraethyl ammonium fluoride(TEAF), tetraethyl ammonium chloride(TEA-CI), dimethyl diethyl ammonium hydroxide, dimethyl diethyl ammonium fluoride, dimethyl diethyl ammonium chloride, alkylbenzyldimethylammonium hydroxide, diethylenetriamine, triethylenetetramine (TETA), tetraethylenepentamine, aminoethylethanolamine (AEEA) and piperazine.

7. The CMP composition according to claim 1 , wherein the content of the phosphate anionic additives is 0.01 to 3 wt %.

8. The CMP composition according to claim 1 , wherein the phosphate anionic additives are phosphate esters or polyphosphate esters.

9. The CMP composition according to claim 1 , wherein the phosphate anionic additives contain a fluorocarbon group.

10. The CMP composition according to claim 1 , wherein the content of the fluorine compounds is 0.01 to 1 wt %.

11. The CMP composition according to claim 1 , wherein the fluorine compound is TMAF or TMAF salt.

12. The CMP composition according to claim 1 , further comprising one or more kinds of materials selected from the group consisting of a dispersant, buffer solution and salts.

13. The CMP composition according to claim 1 , wherein the CMP composition is prepared by adding TMAH to deionized water, gradually introducing fumed silica to disperse it, adding phosphate anionic additives and fluorine compounds to prepare a dispersion comprising fumed silica with secondary particles, and milling the dispersion comprising fumed silica with secondary particles in an opposite collision manner.

14. The CMP composition according to claim 13 , wherein the secondary particles have average diameters of 220 to 290 nm.

15. The CMP composition according to claim 13 , wherein the composition, in dispersed form, has a poly dispersity of 0.25 or less.

16. The CMP composition according to claim 13 , wherein the milling process is jet milling.

17. The CMP composition according to claim 13 , wherein the collision of the dispersion is conducted at a pressure of 500 to 3000 kgf/cm 2 .

18. The CMP composition according to claim 13 , wherein the secondary particle of the fumed silica in the dispersion after milling has an average diameter of 150 to 220 nm, and the CMP composition has a poly dispersity of 0.20 or less.

19. A method for planarizing a semiconductor device, comprising etching an oxide film and a nitride film of the semiconductor device, on which the nitride film and the oxide film are sequentially laminated, to chemically and mechanically polish the oxide film and the nitride film, using a CMP slurry composition comprising fumed silica, TMAH (tetramethyl ammonium hydroxide), phosphate anionic additives, fluorine compounds, and deionized water, wherein the phosphate anionic additives are selected from the group consisting of phosphate esters, polyphosphate esters, and phosphate anionic additives containing a fluorocarbon group.