Method for forming a titanium nitride layer
View Patent ↗A method for forming a titanium nitride layer. The method includes the steps of exposing a semiconductor substrate to a reactive gas containing TiCl 4 and NH 3 for a first deposition to form a layer of titanium nitride on the substrate, at reaction pressure less than 1 torr and temperature less than 500° C.; placing the semiconductor substrate in NH 3 gas for a first annealing step, at pressure between 1 and 3 torr; exposing the semiconductor substrate to a reactive gas comprising TiCl 4 and NH 3 for a second deposition, at pressure exceeding 5 torr and temperature exceeding 500° C.; and subjecting the semiconductor substrate to a second annealing step in NH 3 gas, at pressure exceeding 5 torr.
1. A method for forming a titanium nitride layer, comprising:
exposing a semiconductor substrate to a reactive gas containing TiCl 4 and NH 3 for a first deposition to form a layer of titanium nitride over the substrate, at reaction pressure less than 1 torr and temperature is less than 500° C.;
placing the semiconductor substrate in NH 3 gas for a first annealing operation, at pressure from 1 to 3 torr;
exposing the semiconductor substrate to a reactive gas comprising TiCl 4 and NH 3 for a second deposition, at pressure exceeding 5 torr and temperature exceeding 500° C.; and
subjecting the semiconductor substrate to a second annealing operation in NH 3 gas, at pressure exceeding 5 torr.
2. The method as claimed in claim 1 , wherein the flow ratio of NH 3 /TiCl 4 in the first deposition is 3˜10.
3. The method as claimed in claim 2 , wherein the flowrate of the NH 3 is 40˜60 sccm.
4. The method as claimed in claim 3 , wherein the thickness of the titanium nitride is at least 30 angstroms, and the deposition rate is 30˜80 angstroms/min.
5. The method as claimed in claim 1 , wherein the flow ratio of NH 3 /TiCl 4 in the second deposition exceeds 5.
6. The method as claimed in claim 5 , wherein the flowrate of the TiCl 4 in the second deposition is at least 25 sccm.
7. The method as claimed in claim 6 , wherein the temperature of the substrate in the second deposition is 500˜600° C., the deposition rate is 100˜500 angstroms/min and the thickness of the titanium nitride is at least 60 angstroms.
8. The method as claimed in claim 1 , wherein the flowrate of NH 3 in the first and second deposition exceeds 1000 sccm.
9. The method as claimed in claim 1 , wherein the pressure in the second deposition is 5˜10 torr.
10. The method as claimed in claim 1 , wherein the pressure in the second annealing operation is 5˜10 torr.
11. A method for forming a capacitor for a dynamic random access memory, comprising:
forming a lower electrode plate in a predetermined capacitor area;
forming a dielectric layer on the lower electrode plate;
performing a first deposition to form a first titanium nitride layer on the dielectric layer, wherein the first deposition is carried out by exposing the substrate in a first reactive gas;
performing a first annealing operation;
performing a second deposition to form a second titanium nitride layer on the first titanium nitride layer, wherein the second deposition is carried out by exposing at least the first titanium nitride layer to a second reactive gas comprising TiCl 4 and NH3, at pressure exceeding 5 torr, flow ratio of NH 3 /TiCl 4 exceeding 5, and with a temperature of the substrate exceeding 500° C.; and
performing a second annealing operation.
12. The method as claimed in claim 11 , wherein the dielectric layer is Ta 2 O 5 .
13. The method as claimed in claim 11 , wherein the first reactive gas comprises TiCl 4 and NH 3 .
14. The method as claimed in claim 13 , wherein the flowrate of NH 3 in the first deposition is 40˜60 sccm.
15. The method as claimed in claim 13 , wherein in the first deposition the pressure is less than 1 torr, the temperature is less than 500° C., the thickness of the first titanium nitride is at least 30 angstroms, and the deposition rate is 30˜80 angstroms/min.
16. The method as claimed in claim 11 , wherein the first annealing operation is carried out in NH 3 gas, the pressure is 1˜3 torr and the flowrate of NH 3 exceeds 1000 sccm.
17. The method as claimed in claim 11 , wherein the thickness of the titanium nitride exceeds 60 angstroms, and the deposition rate is 100˜500 angstroms/min.
18. The method as claimed in claim 17 , wherein the flowrate of TiCl 4 in the second deposition is at least 25 sccm.
19. The method as claimed in claim 11 , wherein the second annealing operation is carried out in NH 3 gas, the pressure in the second annealing step exceeds 5 torr, and the flowrate of NH 3 exceeds 1000 sccm.
20. The method as claimed in claim 11 , wherein the lower electrode plate is conductive material.
21. The method as claimed in claim 20 , wherein the conductive material is tungsten or polysilicon.