Doped semiconductor wafer of float zone pulled semiconductor material, and process for producing the semiconductor wafer
View Patent ↗A doped semiconductor wafer of float zone-pulled semiconductor material contains a dopant added to a molten material and has a radial macroscopic resistance distribution of less than 12% and striations of −10% to +10%. There is also a process for producing a doped semiconductor wafer by float zone pulling of a single crystal and dividing up the single crystal, in which process, during the float zone pulling, a molten material which is produced using an induction coil is doped with a dopant. It is exposed to at least one rotating magnetic field and is solidified. The single crystal which is formed during the solidification of the molten material is rotated. The single crystal and the magnetic field are rotated with opposite directions of rotation and the magnetic field has a frequency of 400 to 700 Hz.
1. A process for producing a doped semiconductor wafer by float zone pulling of a single crystal and dividing up the single crystal comprising
during the float zone pulling, a molten material which is produced using an induction coil is doped with a dopant;
exposing the molten material to at least one rotating magnetic field;
solidifying the molten material to produce a single crystal;
rotating the single crystal which is formed during the solidification of the molten material; and
rotating the single crystal and the magnetic field with opposite directions of rotation and the magnetic field having a frequency of 400 to 700 Hz.
2. The process as claimed in claim 1 ,
wherein the magnetic field has a field strength in the range from 1 to 20 mT.
3. The process as claimed in claim 1 ,
wherein the single crystal is rotated at a speed of at least 1 rpm.
4. The process as claimed in claim 1 ,
wherein the magnetic field is produced using a 6-pole magnet system.
5. The process as claimed in claim 1 , comprising
exposing the molten material to a further rotating magnetic field, which rotates in a maimer selected from the group consisting of in a same direction as the molten material and in an opposite direction to the molten material.