IP Library › Assignment 015596/0720
Patent Assignment
Reel/Frame 015596/0720

Change of Name

Recorded: 2004-07-30 Received: 2004-08-03 Pages: 18
Assignor
Assignee
SILTRONIC AG
HANNS-SEIDEL-PLATZ 4, 81737 MUNICH, DEX, GERMANY
Covered Properties (37)
Method for assembling planar workpieces
Application: 10/415,597 →
Process for Machining a Wafer-Like Workpiece
Application: 10/607,626 →
Filtering and Inerting of Combustible Dusts in the Process Off-Gas
Application: 10/410,841 →
Doped Semiconductor Wafer of Float Zone Pulled Semiconductor Material, and Process for Producing the Semiconductor Wafer
Application: 10/410,812 →
Epitaxially Coated Semiconductor Wafer and Process for Producing It
Application: 10/402,171 →
Process and Apparatus for Epitaxially Coating a Semiconductor Wafer and Epitaxially Coated Semiconductor Wafer
Application: 10/387,593 →
Process for producing a highly doped silicon single crystal
Application: 10/371,493 →
Process for the Heat Treatment of a Silicon Wafer, and Silicon Wafer Produced
Application: 10/357,601 →
Silicon single crystal and process for producing it
Application: 10/351,739 →
Process and apparatus for producing a single crystal of semiconductor material
Application: 10/350,570 →
Method and Device for Regulating the Differential Pressure in Epitaxy Reactors
Application: 10/330,816 →
Device for holding a molten semiconductor material
Application: 10/318,712 →
Seed Crystal for Production of Silicon Single Crystal and Method for Production of Silicon Single Crystal
Application: 10/316,402 →
Double-Sided Polishing Process for Producing a Multiplicity of Silicon Semiconductor Wafers
Application: 10/294,846 →
Single Crystal Production Method
Application: 10/283,683 →
Silicon Semiconductor Substrate and Method for Production Thereof
Application: 10/241,180 →
Silicon Semiconductor Substrate and Preparation Thereof
Application: 10/236,273 →
Semiconductor Wafer with Improved Flatness, and Process for Producing the Semiconductor Wafer
Application: 10/218,006 →
Method and device for producing an adhesive-bonded connection between a semiconductor wafer and a carrier plate
Application: 10/213,522 →
Silicon Semiconductor Substrate and Process for Producing the Same
Application: 10/213,470 →
Semiconductor Wafer with Improved Local Flatness, and Method for Its Production
Application: 10/209,121 →
Method and Device for the Production of a Single Crystal
Application: 10/209,106 →
Method for Separating Slices from a Hard Brittle Workpiece, and Wire Saw for Carrying Out the Method
Application: 10/209,115 →
Silicon Single Crystal Produced by Crucible-Free Float Zone Pulling
Application: 10/201,431 →
Process for Material-Removing Machining of Both Sides of Semiconductor Wafers
Application: 10/174,139 →
Method for Cutting Slices from a Workpiece
Application: 10/139,210 →
Process and Apparatus for Producing a Silicon Single Crystal
Application: 10/053,446 →
Double-Side Polishing Process with Reduced Scratch Rate and Device for Carrying Out the Process
Application: 09/989,550 →
Process for the Surface Polishing of Silicon Wafers
Application: 10/021,515 →
Semiconductor Wafer Comprising a Thin Epitaxial Silicon Layer and Method for Producing Same
Application: 09/890,656 →
Process for the Chemical Treatment of Semiconductor Wafers
Application: 09/882,207 →
Method for the Production of an Epitaxially Grown Semiconductor Wafer
Application: 09/864,994 →
Single-Crystal Rod and Process for Its Production
Application: 09/834,571 →
Process for the Double-Side Polishing of Semiconductor Wafers and Carrier for Carrying Out the Process
Application: 09/826,135 →
Semiconductor Wafer Made from Silicon and Method for Producing the Semiconductor Wafer
Application: 09/813,240 →
Method and Apparatus for Doping a Melt with a Dopant
Application: 09/782,999 →
Process for Producing a Semiconductor Wafer
Application: 09/764,634 →