Method and apparatus for fracturing polygons on masks used in an optical lithography process
View Patent ↗A system for fracturing polygons on masks used in lithography processes for manufacturing an integrated circuit is described. The system fractures polygons that include cavities in either the horizontal edges or the vertical edges by examining the aspect ratio (length/width) of prospective slices made at each vertex of the polygon. After determining the aspect ratio of each prospective slice, the system selects the slice with the lowest aspect ratio and slices the polygon into two sub-polygons. Slicing the polygon in this manner effectively eliminates “slivers” or slices with extreme aspect ratios. This process is continued until each sub-polygon is either a rectangle or a trapezoid that can be printed by electron beam photolithography.
1. A method for fracturing polygons on masks used in an optical lithography process for manufacturing an integrated circuit, comprising:
receiving a mask layout to be used in fabricating the integrated circuit, wherein the mask layout includes a polygon that defines a desired feature on the integrated circuit, and wherein the polygon is x-convex or y-convex and wherein the polygon includes a plurality of vertices;
calculating an aspect ratio for each possible slice that extends from a given vertex in the plurality of vertices, wherein the aspect ratio for a slice is the slice length divided by a smaller of two resulting widths on either side of the slice;
selecting the slice with a smallest aspect ratio; and
applying the slice with the smallest aspect ratio to the polygon, wherein selecting the slice with the smallest aspect ratio avoids slices that create extreme aspect ratios.
2. The method of claim 1 , wherein receiving the mask layout further comprises receiving the mask layout after OPC has been applied to the mask layout.
3. The method of claim 1 , further comprising repeating the steps of calculating the aspect ratio, selecting the smallest aspect ratio, and applying the slice until the polygon is sliced such that each sub-polygon is a rectangle or a trapezoid.
4. The method of claim 1 , wherein the method further comprises considering slices that originate from cavity corner vertices.
5. The method of claim 4 , wherein if the given vertex is within a cavity between two serifs on corners of a line end, the method further considers a “roof cut” slice that separates these two serifs and part of the line end from a remainder of the line.
6. The method of claim 1 , wherein if a slice width is less that a pre-specified minimum width thereby creating a sliver, the method further comprises reporting a violation.
7. The method of claim 1 , wherein a critical dimension of the desired feature is not cut.
8. A computer-readable storage medium storing instructions that when executed by a computer cause the computer to perform a method for fracturing polygons on masks used in an optical lithography process for manufacturing an integrated circuit, the method comprising:
receiving a mask layout to be used in fabricating the integrated circuit, wherein the mask layout includes a polygon that defines a desired feature on the integrated circuit, and wherein the polygon is x-convex or y-convex and wherein the polygon includes a plurality of vertices;
calculating an aspect ratio for each possible slice that extends from a given vertex in the plurality of vertices, wherein the aspect ratio for a slice is the slice length divided by a smaller of two resulting widths on either side of the slice;
selecting the slice with a smallest aspect ratio; and
applying the slice with the smallest aspect ratio to the polygon, wherein selecting the slice with the smallest aspect ratio avoids slices that create extreme aspect ratios.
9. The computer-readable storage medium of claim 8 , wherein receiving the mask layout further comprises receiving the mask layout after OPC has been applied to the mask layout.
10. The computer-readable storage medium of claim 8 , the method further comprising repeating the steps of calculating the aspect ratio, selecting the smallest aspect ratio, and applying the slice until the polygon is sliced such that each sub-polygon is a rectangle or a trapezoid.
11. The computer-readable storage medium of claim 8 , wherein the method further comprises considering slices that originate from cavity corner vertices.
12. The computer-readable storage medium of claim 11 , wherein if the given vertex is within a cavity between two serifs on corners of a line end, the method further considers a “roof cut” slice that separates these two serifs and part of the line end from a remainder of the line.
13. The computer-readable storage medium of claim 8 , wherein if a slice width is less that a pre-specified minimum width thereby creating a sliver, the method further comprises reporting a violation.
14. The computer-readable storage medium of claim 8 , wherein a critical dimension of the desired feature is not cut.
15. A mask having structures that were fractured for use in an optical lithography process for manufacturing an integrated circuit:
wherein the mask to be used in fabricating the integrated circuit includes a polygon that defines a desired feature on the integrated circuit, and wherein the polygon is x-convex or y-convex but not both x-convex and y-convex; and
wherein the polygon has been sliced so that slivers are not created by:
calculating an aspect ratio for each possible slice that extends from a given vertex, wherein the aspect ratio for a slice is the slice length divided by a smaller of two resulting widths on either side of the slice,
selecting the slice with a smallest aspect ratio, and
applying the slice with the smallest aspect ratio to the polygon, wherein selecting the slice with the smallest aspect ratio avoids slices that create extreme aspect ratios.
16. The mask of claim 15 , wherein the mask has received OPC corrections.
17. The mask of claim 15 , wherein the polygon has been fractured so that each sub-polygon is a rectangle or a trapezoid.
18. The mask of claim 15 , wherein if a vertex on the polygon is within a cavity between two serifs on corners of a line end, the polygon has been cut by a “roof cut” slice that separates these serifs and part of the line end from a remainder of the line.
19. The mask of claim 18 , wherein the “roof cut” slice is positioned at a vertex that is not associated with a cavity.
20. The mask of claim 15 , wherein a critical dimension of the desired feature is not sliced.