Connection terminal and a semiconductor device including at least one connection terminal
A first protection film ( 3 ) and a second protection film ( 4 ) are formed on an electrode pad ( 2 ). Bumps ( 5 ) are formed at sites where the deposited first and second protection films ( 3 ), ( 4 ) are both removed. The openings ( 3 a ) where the lower, first protection film ( 3 ) is removed are larger than the openings ( 4 a ) where the upper, second protection film ( 4 ) is removed, so that the upper, second protection film ( 4 ) has an overhanging structure. The bottom periphery of the bump ( 5 ) is formed to extend under the second protection film ( 4 ).
1. A connection terminal, comprising:
an electrode pad having layered protection films formed on a surface thereof; and
a projecting electrode formed in an opening in the protection films on the electrode pad,
wherein:
a lower protection film has a larger opening therein than does an upper protection film; and
the projecting electrode has a bottom extending under the upper protection film and has a top extending over the upper protection film.
2. The connection terminal of claim 1 , wherein
the projecting electrode is made of either an element selected from the group consisting of nickel, copper, palladium, gold, and tin or a compound containing one of the elements.
3. The connection terminal of claim 1 , wherein
the projecting electrode has a surface made of gold, palladium, or tin.
4. The connection terminal of claim 1 , wherein
the upper protection film is made of a silicon nitride film, and the lower protection film is made of a silicon oxide film.
5. The connection terminal of claim 1 , wherein
the opening in the lower protection film is of a size equal to, or smaller than, the electrode pad.
6. The connection terminal of claim 1 , wherein the projecting electrode is for connection to an external wire.
7. A connection terminal, comprising:
an electrode pad having layered protection films formed on a surface thereof; and
a projecting electrode formed in an opening in the protection films on the electrode pad,
wherein:
a lower protection film has a larger opening therein than does an upper protection film; and
the projecting electrode has a bottom extending under the upper protection film, wherein
the opening in the lower protection film has such a width that the projecting electrode exhibits an adhesion strength of more than 0.1 N.
8. The connection terminal of claim 7 , wherein the projecting electrode is for connection to an external wire.
9. A connection terminal, comprising:
an electrode pad having layered protection films formed on a surface thereof; and
a projecting electrode formed in an opening in the protection films on the electrode pad,
wherein:
a lower protection film has a larger opening therein than does an upper protection film; and
the projecting electrode has a bottom extending under the upper protection film, wherein
the opening in the upper protection film has such a width that the projecting electrode is separated from adjacent projecting electrodes by a distance of 5 μm or greater.
10. The connection terminal of claim 9 , wherein the projecting electrode is for connection to an external wire.
11. A semiconductor device, comprising
at least one connection terminal comprising:
an electrode pad having layered protection films formed on a surface thereof; and
a projecting electrode formed in an opening in the protection films on the electrode pad,
wherein:
a lower protection film has a larger opening therein than does an upper protection film; and
the projecting electrode has a bottom extending under the upper protection film and has a top extending over the upper protection film.
12. The semiconductor device of claim 11 , wherein the projecting electrode is for connection to an external wire.
13. A connection terminal, comprising:
an electrode pad including layered protection films formed on a surface thereof; and
a projecting electrode including a relatively upper portion and a relatively lower portion, and formed in an opening in the protection films on the electrode pad, wherein a lower protection film includes a relatively larger opening than an upper protection film, wherein the relatively lower portion of the projecting electrode extends under the upper protection film and wherein the relatively lower portion is relatively smaller than the relatively upper portion, and wherein the projecting electrode is for connection to an external wire.
14. A semiconductor device, comprising:
at least one connection terminal, the at least one connection terminal including,
an electrode pad including layered protection films formed on a surface thereof; and
a projecting electrode including a relatively upper portion and a relatively lower portion, and formed in an opening in the protection films on the electrode pad, wherein a lower protection film includes a relatively larger opening than an upper protection film, and wherein the relatively lower portion of the projecting electrode extends under the upper protection film, wherein the relatively lower portion is relatively smaller than the relatively upper portion and wherein the projecting electrode is for connection to an external wire.
15. A semiconductor device, comprising:
at least one connection terminal, the at least one connection terminal including,
an electrode pad including layered protection films formed on a surface thereof; and
a projecting electrode formed in an opening in the protection films on the electrode pad, wherein an upper protection film and a lower protection film have such an opening that the upper protection film overhangs the lower protection film and wherein the projecting electrode sandwiches an overhanging part of the upper protection film.
16. The semiconductor device of claim 15 , wherein the projecting electrode is for connection to an external wire.
17. The connection terminal of claim 13 , wherein the projecting electrode is for connection to an external wire.