DC-DC converter implemented in a land grid array package
A semiconductor chip package that includes a DC—DC converter implemented with a land grid array for interconnection and surface mounting to a printed circuit board. The package includes a two layer substrate comprising a top surface and a bottom surface. At least one via array extends through the substrate. Each via in a via array includes a first end that is proximate to the top surface of the substrate and a second end that is proximate to the bottom surface of the substrate. At least one die attach pad is mounted on the top surface of the substrate and is electrically and thermally coupled to the via array. The DC—DC converter includes at least one power semiconductor die having a bottom surface that forms an electrode. The power semiconductor die is mounted on a die attach pad such that the bottom surface of the die is in electrical contact with the die attach pad. The bottom of the package forms a land grid array. The land grid array includes external pads that are separated into an interior region and a peripheral region. Each external pad located in the interior region of the land grid array is electrically and thermally coupled a via array.
1. A semiconductor chip package, comprising:
a substrate having a top surface and a bottom surface;
at least one via extending through said substrate, said at least one via including a first end that is proximate to said top surface and a second end that is proximate to said bottom surface;
a die attach pad mounted on said top surface such that at least a portion of said die attach pad is electrically and thermally coupled to said via;
a DC—DC converter having at least one power silicon die that includes a top electrode surface and a bottom electrode surface, said bottom electrode surface being thermally coupled to said die attach pad; and
an external pad of a land grid array mounted on said bottom surface, said external pad being electrically and thermally coupled to said via.
2. The chip package according to claim 1 , wherein said at least one power silicon die comprises a power MOSFET.
3. The chip package according to claim 2 , wherein said bottom electrode surface of said at least one power silicon die comprises a drain region of said power MOSFET.
4. The chip package according to claim 1 , wherein said substrate comprises an organic material.
5. The chip package according to claim 1 , wherein said bottom electrode surface is secured to said die attach pad by a thermally conductive die attach adhesive.
6. The chip package according to claim 1 , wherein said DC—DC converter further comprises multiple discrete passive components.
7. The chip package according to claim 1 , wherein said at least one via comprises a copper plated opening.
8. The chip package according to claim 7 , wherein said at least one via is filled with a thermally conductive material.
9. The chip package according to claim 1 , wherein said external pad is located substantially beneath said at least one power silicon die.
10. The chip package according to claim 1 , wherein said at least one via is oriented substantially perpendicular to said top and bottom surfaces.
11. The chip package according to claim 1 , wherein said first and second ends of said at least one via are over-plated.
12. The chip package according to claim 2 , wherein said top electrode surface of said at least one power silicon die comprises a source region of said power MOSFET.