Method for fabricating semiconductor integrated circuit device
View Patent ↗A method for fabricating a semiconductor integrated circuit device of the invention comprises feeding oxidation species containing a low concentration of water, which is generated from hydrogen and oxygen by the catalytic action, to the main surface of or in the vicinity of a semiconductor wafer, and forming a thin oxide film serving as a gate insulating film of an MOS transistor and having a thickness of 5 nm or below on the main surface of the semiconductor wafer at an oxide film-growing rate sufficient to ensure fidelity in formation of an oxide film and uniformity in thickness of the oxide film.
1. A method for fabricating a semiconductor integrated circuit device, comprising the steps of:
(a) preparing first moisture from oxygen and hydrogen by use of a catalyst in a moisture synthesizing unit disposed outside a first heat treatment chamber;
(b) keeping the first moisture in a gaseous state and transferring it into the first heat treatment chamber;
(c) forming a first silicon oxide film over a silicon surface of a first main surface of a wafer in a first atmosphere, which contains the first moisture, in the first heat treatment chamber by thermal oxidation treatment;
(d) prior to step (a) or after (c), generating second moisture by thermal reaction between hydrogen gas and oxygen gas without sunthesizing the seconod moisture using catalyst reaction in a moisture synthesizing unit disposed outside a second heat treatment chamber; and
(e) forming a second silicon oxide film over the silicon surface of the first main surface of the wafer in a second atmosphere, which contains the second moisture, in the second heat treatment chamber by thermal oxidation treatment.
2. A method for fabricating a semiconductor integrated circuit device as claimed in claim 1 , wherein the second moisture is generated by combustion of oxygen gas and hydrogen gas.
3. A method for fabricating a semiconductor integrated circuit device according to claim 3 , wherein said forming said second silicon oxide film is performed before step (a) or after step (c).
4. A method for fabricating a semiconductor integrated circuit device according to claim 1 , wherein said forming said second silicon oxide film is performed before step (a) or after step (c).