Electron beam, generating device, and testing device
View Patent ↗An electron beam generating device, wherein a high-resistance film is formed on the outer surface of an insulator provided with a cathode for emitting thermal electrons and a grid for collecting thermal electrons and forming an electron beam to allow a feeble current to flow to the high-resistance film, thereby preventing the accumulation of thermal electrons on the insulator and discharging. The upper portion of the high-resistance film connected to a chamber supplies an approximate reference potential to the upper portion of the film, and the lower portion of the high-resistance film connected to the grid supplies almost the same potential as that of the grid to the lower portion of the film to allow a feeble current to flow to the film. The prevention of accumulation of thermal electrons on the insulator can prevent discharging, accurately control the current capacity of an electron beam, and give the electron beam generating device a longer service life.
1. An electron beam generating device for generating an electron beam, comprising:
a cathode for generating thermal electrons;
a cathode voltage source for applying negative voltage to said cathode so that the thermal electrons are emitted from said cathode;
a grid for collecting the thermal electrons emitted from said cathode and forming the electron beam;
a grid voltage source for applying negative voltage to said grid, the potential of said grid being lower than that of said cathode; and
an insulator for insulating said cathode voltage source and said grid voltage source from the thermal electrons generated by said cathode, at least a part of an outer surface of said insulator being covered with a high-resistance film.
2. The electron beam generating device as claimed in claim 1 , wherein the outer surface of said insulator is covered with the high-resistance film or conductor.
3. The electron beam generating device as claimed in claim 2 , wherein an upper portion of the high-resistance film electrically connects with a reference potential unit having a reference potential.
4. The electron beam generating device as claimed in claim 2 , wherein a lower portion of the high-resistance film electrically connects with said grid.
5. The electron beam generating device as claimed in claim 3 , wherein
said insulator comprises a first electrode on the outer surface, said first electrode being electrically connected to the reference poterual unit, and
the upper portion of the high-resistance film is electrically connected to said first electrode.
6. The electron beam generating device as claimed in claim 4 , wherein
said insulator comprises a second electrode on the outer surface, said second electrode being electrically connected to said grid, and
the lower portion of the high-resistance film is electrically connected to said second electrode.
7. The electron beam generating device as claimed in claim 1 , wherein the high-resistance film of said insulator comprises metal oxide.
8. The electron beam generating device as claimed in claim 7 , wherein said metal oxide is indium oxide.
9. An electron beam exposure apparatus for exposing a wafer by an electron beam, comprising:
an electron beam generating device for generating the electron beam;
a deflector for deflecting the electron beam to a predetermined position on the wafer; and
a stage for supporting the wafer; wherein
said electron beam generating device comprises:
a cathode for generating thermal electrons;
a cathode voltage source for applying negative voltage to said cathode so that the thermal electrons are emitted from said cathode;
a grid for collecting the thermal electrons emitted from said cathode and forming the electron beam;
a grid voltage source for applying negative voltage to said grid, the potential of said grid being lower than that of said cathode; and
an insulator for insulating said cathode voltage source and said grid voltage source from the thermal electrons generated by said cathode, at least a part of an outer surface of said insulator being covered with a high-resistance film.
10. The electron beam exposure apparatus as claimed in claim 9 , further comprising:
a chamber for storing said electron beam generating device, said deflector, and said stage; and
a pressure reduction means for reducing pressure inside said chamber; wherein
a vacuum area, which is an area evacuated by said pressure reduction means, in said chamber is surrounded with the high-resistance film or a conductor.
11. The electron beam exposure apparatus as claimed in claim 9 , wherein an upper portion of the high-resistance film electrically connects with said chamber.
12. An electron beam generating device for generating an electron beam, comprising:
a cathode for generating the electron beam;
a voltage source for applying a voltage to said cathode so that the electron beam is emitted from said cathode;
an insulator for insulating said voltage source from the electron beam generated by said cathode; and
a high-resistance film for covering at least a part of an outer surface of said insulator.