Manufacturing method of a semiconductor device
View Patent ↗The occurrence of a package crack in the back vicinity of a die pad is restrained by making the outward appearance of the die pad of a lead frame smaller than that of a semiconductor chip which is mounted on it, and also the occurrence of a package crack in the main surface vicinity of the semiconductor chip is restrained by forming a layer of organic material with good adhesion property with the resin that constitutes the package body on the final passivation film (final passivation film) that covers the top layer of conductive wirings of the semiconductor chip.
1. A method for making a semiconductor device comprising the steps of:
(a) making a passivation film of inorganic insulation materials on a top layer of conductive wirings after forming the top layer of conductive wirings on a main surface of a semiconductor wafer, and then making a layer of organic material on said passivation film,
(b) making a bonding pad by holing said layer of organic material and said passivation film on said top layer of conductive wirings by the etching that makes a photo resist film formed on said layer of organic material a mask,
(c) heating said layer of organic material after removing said photo resist film by using a resist removal liquid,
(d) making a semiconductor chip by dicing said semiconductor wafer,
(e) mounting said semiconductor chip on a die pad after preparing a lead frame with said die pad with an outward appearance that is smaller than that of said semiconductor chip,
(f) sealing said semiconductor chip and said die pad by resin mold, and
wherein said method provides, between the step (c) and the step (d), a thinning of thickness of said semiconductor wafer by grounding the back of said semiconductor wafer in the state that the main surface of said semiconductor wafer is covered with a second photo resist film and a protect tape and then heating said layer of organic material.
2. A method for making a semiconductor device according to claim 1 , wherein said resist removal liquid includes a phenol system solvent as the main component.
3. A method for making a semiconductor device comprising the steps of:
(a) making a passivation film of inorganic insulation materials on a top layer of conductive wirings after forming the top layer of conductive wirings on the main surface of a semiconductor wafer, and then covering said passivation film with a layer of organic material,
(b) etching a part of said layer of organic material by using a first photo resist film as a mask,
(c) baking said layer of organic material after removing said photo resist film by using a resist removal liquid,
(d) grounding the back surface of said semiconductor wafer after covering said layer of organic material with a second photo resist film,
(e) backing said layer of organic material after removing said second photo resist film by using a resist removal liquid.
(d) mounting, after separating said semiconductor wafer into a plurality of semiconductor chips, a semiconductor chip on a die pad of a lead frame with an outward appearance which is smaller than that of said semiconductor chip, and then sealing said semiconductor chip and said die pad by resin mold.
4. A method for making a semiconductor device according to claim 3 , wherein the step (e) is performed at such a temperature that the bonding power between said layer of organic material and said resins is recovered.
5. A method for making a semiconductor device comprising the steps of:
(a) making a passivation film of inorganic insulation materials on a top layer of conductive wirings after forming the top layer of conductive wirings on the main surface of a semiconductor wafer, and then covering said passivation film with a layer of organic material,
(b) etching a part of said layer of organic material by using a first photo resist film as a mask,
(c) removing said photo resist film by using a resist removal liquid, and then grounding the back surface of said semiconductor wafer after covering said layer of organic material with a second photo resist film,
(d) backing said layer of organic material after removing said second photo resist film by using a resist removal liquid,
(e) mounting, after separating said semiconductor wafer into a plurality of semiconductor chips, said a semiconductor chip on a die pad with en outer appearance which is smaller than that of said semiconductor chip, and then sealing said semiconductor chip and said die pad by resin mold.
6. A method for making a semiconductor device according to claim 5 , wherein the step (d) is performed at such a temperature that the bonding power between said layer of organic material and said resins is recovered.
7. A method for making a semiconductor device comprising steps of:
(a) making a passivation film of inorganic insulation materials on a top layer of conductive wirings after forming the top layer of conductive wirings on a main surface of a semiconductor wafer, and then covering said passivation film with a photosensitive polyimide resin layer,
(b) making a hole to an area of said photosensitive polyimide resin layer by exposing and developing said photosensitive polyimide resin layer, and then etching a part of said passivation film by using said photosensitive polyimide resin layer having said hole as a mask,
(c) grounding the back of said semiconductor wafer after covering said photosensitive polyimide resin layer with a photo resist film whether or not said photosensitive polyimide resin layer is baked,
(d) backing said photosensitive polyimide resin layer after removing said photo resist film by using a resist removal liquid, and
(e) mounting, after separating said semiconductor wafer into a plurality of semiconductor chips, said a semiconductor chip on a die pad with an outer appearance which is smaller than that of said semiconductor chip, and then sealing said semiconductor chip and said die pad by resin mold.
8. A method for making a semiconductor device according to claim 7 , wherein the step (d) is performed at such a temperature that the bonding power between said photosensitive polyimide resin layer and said resins is recovered.