IP Library Granted Patent US 6,949,745
Granted Patent B2
US 6,949,745 · App. 10/438,145 · Granted Sep 27, 2005

Electron beam apparatus

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Quick Facts
Patent No.
US 6,949,745
App. No.
10/438,145
Granted
Sep 27, 2005
Kind
B2
Abstract

An electron beam apparatus has an optical axis, an electron beam source for generating an electron beam directed along the optical axis, and a magnetic field lens having an axis coincident with the optical axis for focusing the electron beam onto a sample which is subjected to a negative voltage so that secondary electrons are emitted from the sample. The magnetic field lens has a conductive cylinder surrounding a part of the optical axis to permit the passage therethrough of an electron beam from the electron beam source. A first detector detects secondary electrons emitted by the sample in a direction away from the optical axis and is disposed at a position generally confronting the conductive cylinder. A second detector is disposed over the conductive cylinder. A Wien filter deflector deflects secondary electrons emitted by the sample toward and for detection by the second detector. The Wien filter deflector is disposed on the optical axis and between the conductive cylinder and the second detector.

Claims (17)

1. In an electron beam apparatus having an optical axis, an electron beam source for generating an electron beam directed along the optical axis, and a magnetic field lens having an axis coincident with the optical axis for focusing the electron beam onto a sample subjected to a negative voltage so that secondary electrons are emitted from the sample, the magnetic field lens comprising:

a conductive cylinder surrounding a part of the optical axis to permit the passage therethrough of an electron beam from the electron beam source;

a reflecting elate disposed over and surrounding the conductive cylinder;

a first detector for detecting secondary electrons emitted by the sample in a direction away from the optical axis, the first detector being disposed at a position generally confronting the conductive cylinder;

a second detector disposed over the conductive cylinder, at least one of the first detector and the second detector comprising a scintillation detector;

a Wien filter deflector for deflecting secondary electrons emitted by the sample toward the second detector and for detection by the second detector, the Wien filter deflector being disposed on the optical axis and between the conductive cylinder and the second detector; and

means for applying a negative voltage to the conductive cylinder and the reflecting plate.

2. An electron beam apparatus according to claim 1 ; wherein a value of the negative voltage applied to the conductive cylinder and the reflecting plate is the same as that of the negative voltage applied to the sample or larger than the negative voltage applied to the sample.

3. In an electron beam apparatus having an optical axis, an electron beam source for generating an electron beam, and a magnetic field lens having an axis coincident with the optical axis for focusing the electron beam onto a sample subjected to a negative voltage so that secondary electrons are emitted from the sample, the magnetic field lens comprising:

a first detector spaced-apart from the optical axis for detecting secondary electrons emitted from the sample;

a second detector disposed over the first detector and spaced-apart from the optical axis for detecting secondary electrons emitted from the sample, at least one of the first detector and the second detector comprising a scintillator detector;

a first deflector disposed on the optical axis and between the first and second detectors for deflecting secondary electrons emitted from the sample toward and for detection by the second detector;

a pair of stages of second deflectors for deflecting the electron beam generated by the electron beam source toward the second detector so that the electron beam enters the first deflector while intersecting the optical axis at an inclination angle;

a conductive cylinder surrounding part of the optical axis;

a reflecting plate disposed over and surrounding the conductive cylinder; and

means for applying a negative voltage to the conductive cylinder and the reflecting plate.

4. An electron beam apparatus according to claim 3 ; wherein a value of the negative voltage applied to the conductive cylinder and the reflecting plate is the same as that of the negative voltage applied to the sample or larger than the negative voltage applied to the sample.

Assignments (2)
CHANGE OF NAME Recorded Sep 25, 2014
From: SII NANOTECHNOLOGY INC.
To: HITACHI HIGH-TECH SCIENCE CORPORATION
Reel/Frame 033817/0078 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 15, 2005
From: YONEZAWA, AKIRA
To: SII NANO TECHNOLOGY INC.
Reel/Frame 016885/0573 →