Sensor usable in ultra pure and highly corrosive environments
View Patent ↗The electrical pin lead structure and brazing technique of the present invention provide a brazed lead in a sensor that adheres well to a semiconductor substrate while facilitating lateral flexibility without joint fatigue or breakage. In one example embodiment, the pin lead includes a coil head that is brazed to a silicon layer on a sapphire substrate using a silver-copper-palladium braze material. An advantage to this approach is the ability to both braze the pin lead to the diaphragm and seal the diaphragm to the ceramic backing plate with a high temperature glass in a single process step. Further, the palladium in the braze composition is a factor in reducing surface tension between the metal lead and semiconductor substrate during cooling to avoid stress fractures in the substrate.
1. A sensor having a non-porous outer surface, said sensor comprising:
a backing plate that includes apertures extending therethrough;
a diaphragm;
a sensing element disposed over an inner surface of the diaphragm;
at least one electrical lead extending through at least one aperture and coupled to the sensing element on the diaphragm, the electrical lead having a coil head adapted for brazing over the inner surface of the diaphragm with a high temperature braze composition; and
a glass layer adapted to be bonded by glassing to the backing plate and the diaphragm, the glass layer having both a high bond strength and a high melt temperature that is at or above 700° C., wherein the glass layer bonds the backing plate to the diaphragm and the coil head is brazed to the sensing element.
2. The sensor of claim 1 , wherein the at least one electrical lead has a coefficient of expansion similar to that of the diaphragm to reduce stresses on the diaphragm as the braze composition and the lead are cooled after being subjected to a single high temperature melting operation.
3. The sensor of claim 1 , wherein the at least one electrical lead is formed into a coil spring from a wire selected from the group consisting of nickel and KOVAR.
4. The sensor of claim 1 , wherein the braze composition comprises copper, silver and palladium.
5. The sensor of claim 1 , further comprising:
bond pads disposed between said glass layer and said non-porous diaphragm; and
windows formed in said glass layer providing access to said bond pads, wherein said electrical leads are brazed to said bond pads.
6. The sensor of claim 5 , wherein said bond pads comprise a titanium layer and a diffusion barrier and the diaphragm is comprised of sapphire.
7. An electrical lead member configured for use in connection with a semiconductor element disposed on an insulating substrate, the electrical lead comprising a coiled lead member, a portion of the coiled member adapted to be brazed to the semiconductor element on the substrate.
8. The lead member of claim 7 , wherein the coiled member is located at the end of a shaft of an electrical lead member and is comprised of a coiled spring member adapted to be bonded to the semiconductor element.
9. The lead member of claim 7 , wherein the coiled member is a coiled spring member.
10. The lead member of claim 9 , wherein the coiled spring member is comprised of a plurality of coils, the coils at an end being more closely spaced than the coils in the middle.
11. A method of bonding an electrical lead to a semiconductor device comprising the steps of:
forming an electrical lead comprised of a coiled member;
applying a braze composite material on the substrate surface;
locating a portion of the coiled member on the braze material and on a substrate surface such that a shaft of the lead is substantially perpendicular to the surface of the substrate; and
heating the braze composite material to a sufficiently high temperature such that the braze material melts and the coiled member adheres to the substrate surface as the braze material cools.
12. The method of claim 11 , wherein forming the coiled member includes a coil head formed from a plurality of coils.
13. The method of claim 11 , further comprising cooling the braze material over time to avoid a stress fracture in the substrate.
14. The method of claim 11 , wherein forming the coiled member includes forming a coil head on the electrical lead.
15. The method of claim 11 , further comprising the step of adding a weight on the sensor before heating the braze material.
16. A method for bonding an electrical lead to a semiconductor device comprising the steps of:
forming an electrical lead comprised of a coiled member;
providing a backing plate that includes apertures extending therethrough;
providing a substrate having a semiconductor element thereon and adapted to be coupled with the backing plate;
providing a glass layer adapted to be bonded by glassing to the backing plate and the substrate, the glass layer comprised of a high bond strength and high melt temperature material;
applying a braze composite material in the apertures of the backing plate; and
locating the coiled member of the electrical lead through at least one aperture in the backing plate and adjacent the braze material, such that a portion of the lead is protruding from the backing plate; and
heating the braze composite material and the glass layer to a sufficiently high temperature such that the coiled member is brazed to the substrate and the backing plate and the substrate are glassed together.
17. The method of claim 16 , wherein the electrical lead is comprised of the coiled member and a shaft.
18. The method of claim 16 , further comprising the step of adding a weight on the sensor before heating the braze material.