Semiconductor device and fabrication method with etch stop film below active layer
View Patent ↗A semiconductor device includes a semiconductor layer formed on part of an insulating layer. The semiconductor layer includes a diffusion region and a channel region. The insulating layer is etched so that the semiconductor layer is separated from the insulating layer below at least part of the diffusion region. The space left below this part of the semiconductor layer is filled by an etch stop film that also covers the side surfaces of the insulating layer. The etch stop film prevents contact holes targeted at the diffusion region from penetrating the insulating layer due to alignment error or defects in the semiconductor layer. Since the etch stop film is not present below the channel region, the electrical characteristics of the semiconductor device are not altered.
1. A semiconductor device comprising:
an insulating layer;
a semiconductor layer formed on the insulating layer, the semiconductor layer including a channel region and a diffusion region adjacent the channel region, the semiconductor layer having side surfaces and a bottom surface, the bottom surface making contact with the insulating layer in the channel region and being at least partly separated from the insulating layer in the diffusion region; and
an etch stop film covering the side surfaces of the semiconductor layer and covering the part of the bottom surface of the semiconductor layer separated from the insulating layer.
2. The semiconductor device of claim 1 , wherein the etch stop film is formed as a unitary film.
3. The semiconductor device of claim 1 , wherein the etch stop film is formed on the insulating layer.
4. The semiconductor device of claim 1 , wherein the bottom surface of the semiconductor layer is separated from the insulating layer in all parts of the diffusion region.
5. The semiconductor device of claim 1 , wherein the etch stop film and the insulating layer have different thermal shrinkage factors.
6. The semiconductor device of claim 5 , wherein the bottom surface of the semiconductor layer covered by the etch stop film curves toward the insulating layer.
7. The semiconductor device of claim 1 , further comprising a gate electrode extending in a first direction over the channel region of the semiconductor layer, the etch stop film, and the insulating layer, the gate electrode having a first length within the channel region and a second length, different from the first length, exterior to the channel region, the first and second lengths being measured in a second direction perpendicular to the first direction.
8. The semiconductor device of claim 7 , wherein the second length is greater than the first length.
9. The semiconductor device of claim 8 , wherein the insulating layer is substantially absent below the diffusion region.