IP Library › Granted Patent US 8,183,559
Granted Patent B2
US 8,183,559 · App. 10/441,214 · Granted May 22, 2012

Organic field effect transistor

Assignee: Semiconductor Energy Laboratory Co., Ltd.
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Quick Facts
Patent No.
US 8,183,559
App. No.
10/441,214
Granted
May 22, 2012
Kind
B2
Abstract

In an organic field effect transistor, including, on a substrate having an insulating surface, at least a gate electrode, a gate insulating film formed in contact with the gate electrode, an organic semiconductor film formed in contact with the gate insulating film, and at least a pair of source-drain electrodes formed in contact with the organic semiconductor film, a carrier generating electrode to which carriers can be injected in response to a gate signal is implanted within the organic semiconductor film.

Claims (92)

1. An organic field effect transistor comprising:

a first gate electrode over and in contact with an insulating surface over a substrate;

a first gate insulating film over and in contact with the first gate electrode;

a first source electrode and first drain electrode over and in contact with the first gate insulating film;

an organic semiconductor film over and in contact with the first source electrode, the first drain electrode, and the first gate insulating film;

a floating electrode in the organic semiconductor film;

a second source electrode and a second drain electrode over and in contact with the organic semiconductor film;

a second gate insulating film over and in contact with the organic semiconductor film; and

a second gate electrode over and in contact with the second gate insulating film,

wherein the floating electrode comprises:

a negative pole side buffer layer which is an organic thin film layer comprising an alkali metal ion or an alkali earth metal ion; and

a positive pole side buffer layer containing an acceptor type inorganic semiconductor material.

2. An organic field effect transistor comprising:

a first gate electrode over and in contact with an insulating surface over a substrate;

a first gate insulating film over and in contact with the first gate electrode;

a first source electrode and first drain electrode over and in contact with the first gate insulating film;

a first organic semiconductor film over and in contact with the first source electrode, the first drain electrode, and the first gate insulating film;

a floating electrode over and in contact with the first organic semiconductor film;

a second organic semiconductor film over and in contact with the first organic semiconductor film and the floating electrode;

a second source electrode and a second drain electrode over and in contact with the second organic semiconductor film;

a second gate insulating film over and in contact with the second organic semiconductor film; and

a second gate electrode formed in contact with the second gate insulating film,

wherein the floating electrode comprises:

a negative pole side buffer layer which is an organic thin film layer comprising an alkali metal ion or an alkali earth metal ion; and

a positive pole side buffer layer containing an acceptor type inorganic semiconductor material.

3. The organic field effect transistor according to claim 2 ,

wherein the first organic semiconductor film is hole transportable, and the second organic semiconductor film is electron transportable.

4. The organic field effect transistor according to claim 2 ,

wherein the first organic semiconductor film is electron transportable, and the second organic semiconductor film is hole transportable.

5. The organic field effect transistor according to claim 1 ,

wherein the first source electrode and the second source electrode are connected.

6. The organic field effect transistor according to claim 2 ,

wherein the first source electrode and the second source electrode are connected.

7. The organic field effect transistor according to claim 1 ,

wherein the first drain electrode and the second drain electrode are connected.

8. The organic field effect transistor according to claim 2 ,

wherein the first drain electrode and the second drain electrode are connected.

9. An organic field effect transistor comprising:

a first gate electrode over and in contact with an insulating surface over a substrate;

a first gate insulating film over and in contact with the first gate electrode;

a first electrode over and in contact with the first gate insulating film;

an organic semiconductor film over and in contact with the first electrode and the first gate insulating film;

a floating electrode in the organic semiconductor film;

a second electrode over and in contact with the organic semiconductor film;

a second gate insulating film over and in contact with the organic semiconductor film; and

a second gate electrode over and in contact with the second gate insulating film,

wherein the floating electrode comprises:

a negative pole side buffer layer which is an organic thin film layer comprising an alkali metal ion or an alkali earth metal ion; and

a positive pole side buffer layer containing an acceptor type inorganic semiconductor material.

10. An organic field effect transistor comprising:

a first gate electrode over and in contact with an insulating surface over a substrate;

a first gate insulating film over and in contact with the first gate electrode;

a first electrode over and in contact with the first gate insulating film;

a first organic semiconductor film over and in contact with the first electrode and the first gate insulating film;

a floating electrode over and in contact with the first organic semiconductor film;

a second organic semiconductor film over and in contact with the first organic semiconductor film and the floating electrode;

a second electrode over and in contact with the second organic semiconductor film;

a second gate insulating film over and in contact with the second organic semiconductor film; and

a second gate electrode over and in contact with the second gate insulating film,

wherein the floating electrode comprises:

a negative pole side buffer layer which is an organic thin film layer comprising an alkali metal ion or an alkali earth metal ion; and

a positive pole side buffer layer containing an acceptor type inorganic semiconductor material.

11. The organic field effect transistor according to claim 10 ,

wherein the first organic semiconductor film is hole transportable, and the second organic semiconductor film is electron transportable.

12. The organic field effect transistor according to claim 10 ,

wherein the first organic semiconductor film is electron transportable, and the second organic semiconductor film is hole transportable.

13. An organic field effect transistor comprising:

a substrate having an insulating surface;

a gate electrode over the substrate;

a gate insulating film over and in contact with the gate electrode;

an organic semiconductor film over and in contact with the gate insulating film;

a source electrode and a drain electrode over and in contact with the organic semiconductor film; and

a floating electrode in the organic semiconductor film,

wherein the floating electrode comprises:

a negative pole side buffer layer which is an organic thin film layer comprising a an alkali metal ion or an alkali earth metal ion; and

a positive pole side buffer layer containing an acceptor type inorganic semiconductor material.

14. The organic field effect transistor according to claim 13 ,

wherein the floating electrode is embedded in the organic semiconductor film, and

wherein the floating electrode is separated from the source electrode and the drain electrode.

15. The organic field effect transistor according to claim 13 ,

wherein the organic semiconductor film comprises two layers.

16. The organic field effect transistor according to claim 13 , further comprising an insulating film over the organic semiconductor film.

17. The organic field effect transistor according to claim 1 ,

wherein the acceptor type inorganic semiconductor material is vanadium oxide.

18. The organic field effect transistor according to claim 2 ,

wherein the acceptor type inorganic semiconductor material is vanadium oxide.

19. The organic field effect transistor according to claim 9 ,

wherein the acceptor type inorganic semiconductor material is vanadium oxide.

20. The organic field effect transistor according to claim 10 ,

wherein the acceptor type inorganic semiconductor material is vanadium oxide.

21. The organic field effect transistor according to claim 13 ,

wherein the acceptor type inorganic semiconductor material is vanadium oxide.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 20, 2003
From: TSUTSUI, TETSUO
To: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Reel/Frame 014095/0190 →
Priority Claims (1)
JP 2002-146428 · May 21, 2002 · national
Continuity (1)
Related Publication 20030218166A1 · Nov 27, 2003