Method for fabricating a self-aligned bipolar transistor having increased manufacturability and related structure
View Patent ↗According to one exemplary embodiment, a bipolar transistor comprises a base having a top surface. The bipolar transistor further comprises a base oxide layer situated on top surface of the base. The bipolar transistor further comprises a sacrificial post situated on the base oxide layer. The bipolar transistor further comprises a conformal layer situated over the sacrificial post and top surface of the base, where the conformal layer has a density greater than a density of the base oxide layer. The conformal layer may be, for example, HDPCVD oxide. According to this exemplary embodiment, the bipolar transistor further comprises a sacrificial planarizing layer situated over the conformal layer. The sacrificial planarizing layer has a first thickness in a first region between first and second link spacers and a second thickness in a second region outside of first and second link spacers, where the second thickness is generally greater than the first thickness.
1. A method for fabricating a bipolar transistor, said method comprising steps of:
depositing a base oxide layer on a top surface of a base;
fabricating a sacrificial post on said base oxide layer;
forming a conformal layer over said sacrificial post, said conformal layer having a density greater than a density of said base oxide layer;
depositing a sacrificial planarizing layer over said conformal layer and said base, wherein said sacrificial planarizing layer comprises an organic BARC.
2. A method for fabricating a bipolar transistor, said method comprising steps of:
depositing a base oxide layer on a top surface of a base;
fabricating a sacrificial post on said base oxide layer;
forming a conformal layer over said sacrificial post, said conformal layer having a density greater than a density of said base oxide layer;
depositing a sacrificial planarizing layer over said conformal layer and said base;
depositing a mask over said sacrificial planarizing layer;
patterning an emitter window opening in said mask, wherein said emitter window opening has a width greater than a width of said sacrificial post.
3. A method for fabricating a bipolar transistor, said method comprising steps of:
depositing a base oxide layer on a top surface of a base;
fabricating a sacrificial post on said base oxide layer;
forming a conformal layer over said sacrificial post, said conformal layer having a density greater than a density of said base oxide layer;
depositing a sacrificial planarizing layer over said conformal layer and said base;
depositing a mask over said sacrificial planarizing layer;
patterning an emitter window opening in said mask, wherein said emitter window opening has a width smaller than a width of said sacrificial post.