CMOS image sensor
View Patent ↗An example CMOS image sensor has pixel units and protection regions. The pixel unit has a light sensing region for converting an incident light into an electrical signal and an active region for controlling the transfer of the electrical signal. Each pixel unit is isolated by an element isolation layer. The protection region, which is located between each element isolation layer, prevents crosstalk generated between each pixel unit while the incident light is converted to the electrical signal. The protection region may include a well and a junction.
1. A complimentary metal oxide semiconductor (CMOS) image sensor comprising:
a pixel unit having a light sensing region configured to convert incident light into an electrical signal and an active region for controlling the transfer of the electrical signal;
an element isolation layer adjacent the pixel unit; and
a protection region adjacent the element isolation layer, the protection region including a well and a junction to prevent crosstalk generated by the pixel unit when incident light is converted to the electrical signal, wherein the well comprises a P-well and the junction comprises an n+ junction and wherein a positive voltage is applied to the n+ junction to eliminate electron flow into an adjacent pixel unit.
2. A complimentary metal oxide semiconductor (CMOS) image sensor comprising:
a pixel unit having a light sensing region configured to convert incident light into an electrical signal and an active region for controlling the transfer of the electrical signal;
an element isolation layer adjacent the pixel unit; and
a protection region adjacent the element isolation layer, the protection region including a well and a junction to prevent crosstalk generated by the pixel unit when incident light is converted to the electrical signal, wherein the well comprises an N-well and the junction comprises a p+ junction and wherein a positive voltage is applied to the p+ junction to eliminate electron flow into an adjacent pixel unit.
3. A complimentary metal oxide semiconductor (CMOS) image sensor comprising:
a pixel unit having a light sensing region configured to convert incident light into an electrical signal and an active region for controlling the transfer of the electrical signal;
an element isolation layer adjacent the pixel unit; and
a protection region adjacent the element isolation layer, the protection region including a well and a junction to prevent crosstalk generated by the pixel unit when incident light is converted to the electrical signal, wherein the well comprises an N-well and the junction comprises a p+ junction and wherein one of a negative voltage and a zero voltage is applied to the p+ junction to eliminate holes.
4. A complimentary metal oxide semiconductor (CMOS) image sensor comprising:
a pixel unit having a light sensing region configured to convert incident light into an electrical signal and an active region for controlling the transfer of the electrical signal;
an element isolation layer adjacent the pixel unit; and
a protection region adjacent the element isolation layer, the protection region including a well and a junction to prevent crosstalk generated by the pixel unit when incident light is converted to the electrical signal, wherein the well comprises a P-well and the junction comprises a p+ junction and wherein one of a negative voltage and a zero voltage is applied to the p+ junction to eliminate holes.