Interconnection structure and fabrication method thereof
View Patent ↗An interconnection structure and a fabrication method thereof. A first organic low-k material layer, a stress redistribution layer, a second organic low-k dielectric layer are formed in sequence over a substrate, followed by forming an opening in the first organic low-k material layer, the stress redistribution layer, and the second organic low-k dielectric layer. The opening is then filled with a conductive material to form an interconnection structure. The stress redistribution layer has a heat expansion coefficient closer to that of the substrate, while such heat expansion coefficient differs more significantly from those of the first and second organic low-k material layers.
1. An interconnection structure, comprising:
a first organic low-k material layer formed over a substrate;
a stress redistribution layer formed on the first organic low-k material layer, wherein the stress redistribution layer is selected from the group consisting of silicon carbide (SiC), silicon hydroxyl carbide (SiCOH), spin-on glass (SOG), hydrido organo siloxane polymer (HOSP) and a combination thereof;
a second organic low-k material layer formed on the stress redistribution layer; and
an interconnection formed in the first organic low-k material layer, the stress redistribution layer, and the second organic low-k material layer.
2. The interconnection structure according to claim 1 , wherein the interconnection includes a via.
3. The interconnection structure according to claim 1 , wherein the interconnection includes a conductive line.
4. The interconnection structure according to claim 1 , wherein the interconnection includes a dual damascene comprising a via and a conductive line formed above the via.
5. The interconnection structure according to claim 4 , wherein the stress redistribution layer is formed in between a top portion and bottom portion of the via.
6. The interconnection structure according to claim 4 , wherein the stress redistribution layer is formed in between a top portion and bottom portion of the conductive line.
7. The interconnection structure according to claim 1 , wherein the first and second organic low-k material layers arc made of the same material.
8. The interconnection structure according to claim 1 , wherein the first and second organic low-k material layers are made of a material selected from a group consisting of polyimide, fluorinated polyimide, poly(arylene ether), parylene, polytetrafluoroethylene (PTFE), and beuzocyclobutene (BCB).
9. The interconnection structure according to claim 1 , further comprising a cap layer formed in between the first organic low-k material layer and the substrate.
10. The interconnection structure according to claim 9 , wherein the cap layer includes a silicon nitride layer.
11. The interconnection structure according to claim 1 , further comprising a diffusion barrier layer formed between the interconnection and device layers including the substrate, the first organic low-k material layer, the stress redistribution layer, and the second organic low-k material layer.
12. The interconnection structure according to claim 11 , wherein the diffusion barrier layer includes a titanium nitride layer.