Cleaning method and etching method
A cleaning method and an etching method for removing, by cleaning grease components and silicon micro pieces hard to remove, used for an apparatus and a carrier for manufacturing a semiconductor wafer or a semiconductor device. Matters to be removed are brought into contact with XeF 2 gas produced by sublimation in a vacuum atmosphere to decompose and gasify the grease components and to remove silicon pieces by etching. If a trace of residual water is left in the vacuum atmosphere before the cleaning, the H 2 O reacts with XeF 2 , so that HF is produced. Therefore, for example, the native oxide SiO 2 formed on the silicon pieces can be removed, and XeF 2 can directly react with silicon, thereby enabling etching. The cleaning and etching speeds are extremely accelerated.
1. A cleaning method comprising:
causing XeF 2 gas to contact and act on an article to be cleaned in a vacuum atmosphere containing a residual amount of water, and then
causing XeF 2 gas to contact and act on the article to be cleaned in a vacuum atmosphere not containing water.
2. The cleaning method according to claim 1 , wherein the article to be cleaned is a member of the group consisting of a gas passageway and an inside of a chamber of a semiconductor wafer manufacturing apparatus or a semiconductor device manufacturing apparatus.
3. The cleaning method according to claim 1 , wherein the article to be cleaned is a member of the group consisting of a semiconductor wafer, a semiconductor device, and a carrier thereof.
4. The cleaning method according to claim 1 , further comprising controlling a gas flow rate of the XeF 2 gas.
5. The cleaning method according to claim 1 , further comprising controlling an amount of the water in the vacuum atmosphere containing the residual amount of water.
6. The cleaning method according to claim 5 , wherein the water amount controlling step comprises adding water vapor to said vacuum atmosphere containing the residual amount of water.
7. The cleaning method according to claim 5 , wherein the water amount controlling step comprises leaving a required amount of residual water in the vacuum atmosphere.
8. An etching method comprising:
causing XeF 2 gas to contact and act on an article to be processed in a vacuum atmosphere containing a residual amount of water, and then
causing XeF 2 gas to contact and act on the article to be processed in a vacuum atmosphere not containing water.
9. The etching method according to claim 8 , wherein the article to be processed is a member of the group consisting of a gas passageway and an inside of a chamber of a semiconductor wafer manufacturing apparatus or a semiconductor device manufacturing apparatus.
10. The etching method according to claim 8 , wherein the article to be processed is a silicon wafer.