Brown-out detector
A brown-out detector that continuously monitors power supply voltage and provides an output signal that transitions to a logic HIGH state when the monitored power supply voltage exceeds a predetermined threshold value. One embodiment of the present invention comprises a first voltage reference with respect to ground that varies in direct proportion to absolute temperature, a second voltage reference with respect to the supply voltage that varies inversely with absolute temperature, and a comparator having the first voltage reference coupled to one input, and the second voltage reference coupled to the other input, such that the comparator output changes state when the power supply voltage exceeds a predetermined threshold voltage that is relatively independent of absolute temperature. The circuit may also be configured such that the first voltage reference varies inversely with absolute temperature, while the second voltage reference varies in direct proportion to absolute temperature.
1. A power supply voltage monitoring circuit that provides an output signal when a power supply voltage measured with respect to ground exceeds a predetermined threshold voltage, the monitoring circuit comprising:
a first voltage reference providing a first reference voltage with respect to ground, said first reference voltage varying in direct proportion to absolute temperature;
a second voltage reference supplying a second reference voltage with respect to the supply voltage, said second reference voltage varying inversely with absolute temperature; and
a comparator having the first reference voltage coupled to one input, and the second reference voltage coupled to the other input, such that the comparator output changes state when the power supply voltage exceeds the predetermined threshold voltage, which is relatively independent of absolute temperature.
2. The power supply voltage monitoring circuit of claim 1 , wherein the first voltage reference with respect to ground comprises a diode-connected NMOS transistor in series with a current source.
3. The power supply voltage monitoring circuit of claim 2 , wherein the source of the diode-connected NMOS transistor is coupled to ground, and the current source is coupled between the power supply voltage and the drain of the diode-connected NMOS transistor.
4. The power supply voltage monitoring circuit of claim 1 , wherein the second voltage reference with respect to the supply voltage comprises a substrate bipolar transistor with a current source coupled to its base.
5. The power supply voltage monitoring circuit of claim 4 , wherein the substrate bipolar transistor comprises a substrate PNP transistor.
6. The power supply voltage monitoring circuit of claim 5 , wherein beta of the substrate PNP transistor is no more than 5.
7. The power supply voltage monitoring circuit of claim 5 , wherein the emitter of the substrate PNP transistor is coupled to the power supply voltage, the collector of the substrate PNP transistor is coupled to ground, and the current source is coupled between the base of the substrate PNP transistor and ground.
8. The power supply voltage monitoring circuit of claim 3 , wherein the drain of the diode-connected NMOS transistor is coupled to the non-inverting input of the comparator.
9. The power supply voltage monitoring circuit of claim 7 , wherein the base of the substrate PNP transistor is coupled to the inverting input of the comparator.
10. The power supply voltage monitoring circuit of claim 1 , wherein the first reference voltage has a positive temperature coefficient approximately equal to the magnitude of the negative temperature coefficient of the second reference voltage.
11. The power supply voltage monitoring circuit of claim 1 , wherein the comparator is a two-stage comparator having an NMOS input transistor pair.
12. The power supply voltage monitoring circuit of claim 2 , further comprising a hysteresis circuit interposed between the first voltage reference and the comparator, the hysteresis circuit comprising a current sink that diverts current from the diode-connected NMOS transistor at a predetermined trigger voltage.
13. A power supply voltage monitoring circuit that provides an output signal when a power supply voltage measured with respect to ground exceeds a predetermined threshold voltage, the monitoring circuit comprising:
a first voltage reference that provides a first reference voltage with respect to ground that varies in direct proportion to absolute temperature, wherein the first voltage reference comprises a diode-connected NMOS transistor in series with a current source;
a second voltage reference that provides a second reference voltage that varies inversely with absolute temperature, wherein the second voltage reference comprises a substrate bipolar transistor with a current source coupled to its base; and
a two-stage comparator having an NMOS input transistor pair, with the drain of the diode-connected NMOS transistor in the first voltage reference coupled to its non-inverting input, and the base of the substrate PNP transistor in the second voltage reference coupled to its inverting input, such that the comparator output changes state when the power supply voltage exceed the predetermined threshold voltage;
wherein the first reference voltage has a positive temperature coefficient approximately equal to the magnitude of the negative temperature coefficient of the second reference voltage, such that the predetermined threshold voltage is relatively independent of absolute temperature.
14. The power supply voltage monitoring circuit of claim 13 , wherein the source of the diode-connected NMOS transistor in the first voltage reference is coupled to ground, and the current source is coupled between the power supply voltage and the drain of the diode-connected NMOS transistor.
15. The power supply voltage monitoring circuit of claim 13 , wherein the substrate bipolar transistor in the second voltage reference comprises a substrate PNP transistor.
16. The power supply voltage monitoring circuit of claim 15 , wherein beta of the substrate PNP transistor is no more than 5.
17. The power supply voltage monitoring circuit of claim 15 , wherein the emitter of the substrate PNP transistor is coupled to the power supply voltage, the collector of the substrate PNP transistor is coupled to ground, and the current source is coupled between the base of the substrate PNP transistor and ground.
18. The power supply voltage monitoring circuit of claim 13 , further comprising a hysteresis circuit interposed between the first voltage reference and the comparator, the hysteresis circuit comprising a current sink that diverts current from the diode-connected NMOS transistor at a predetermined trigger voltage.
19. A power supply voltage monitoring circuit that provides an output signal when a power supply voltage measured with respect to ground exceeds a predetermined threshold voltage, the monitoring circuit comprising:
a first voltage reference that provides a first reference voltage with respect to ground that varies in direct proportion to absolute temperature, wherein the first voltage reference comprises a diode-connected NMOS transistor in series with a current source;
a second voltage reference that provides a second reference voltage with respect to the supply voltage that varies inversely with absolute temperature, wherein the second voltage reference comprises a substrate bipolar transistor with a current source coupled to its base;
a two-stage comparator having an NMOS input transistor pair, with the drain of the diode-connected NMOS transistor in the first voltage reference coupled to its non-inverting input, and the base of the substrate PNP transistor in the second voltage reference coupled to its inverting input, such that the comparator output changes state when the power supply voltage exceeds the predetermined threshold voltage; and
a hysteresis circuit interposed between the first voltage reference and the comparator, the hysteresis circuit comprising a current sink that diverts current from the diode-connected NMOS transistor at a predetermined trigger voltage;
wherein the first reference voltage has a positive temperature coefficient approximately equal to the magnitude of the negative temperature coefficient of the second reference voltage, such that the predetermined threshold voltage is relatively independent of absolute temperature.
20. The power supply voltage monitoring circuit of claim 19 , wherein the source of the diode-connected NMOS transistor in the first voltage reference is coupled to ground, and the current source is coupled between the power supply voltage and the drain of e diode-connected NMOS transistor.
21. The power supply voltage monitoring circuit of claim 19 , wherein the substrate bipolar transistor in the second voltage reference comprises a substrate PNP transistor.
22. The power supply voltage monitoring circuit of claim 21 , wherein beta of the substrate PNP transistor is no more than 5.
23. The power supply voltage monitoring circuit of claim 21 , wherein the emitter of the substrate PNP transistor is coupled to the power supply voltage, the collector of the substrate PNP transistor is coupled to ground, and the current source is coupled between the base of the substrate PNP transistor and ground.
24. A power supply voltage monitoring circuit that provides an output signal when a power supply voltage measured with respect to ground exceeds a predetermined threshold voltage, the monitoring circuit comprising:
a first voltage reference that provides a first reference voltage with respect to ground that varies inversely with absolute temperature;
a second voltage reference that provides a second reference voltage with respect to the supply voltage that varies in direct proportion to absolute temperature; and
a comparator having the first reference voltage coupled to one input, and the second reference voltage coupled to the other input, such that the comparator output changes state when a power supply voltage exceeds a predetermined threshold voltage that is relatively independent of absolute temperature.