Method for fabricating semiconductor integrated circuit
View Patent ↗The semiconductor device is formed according to the following steps. A TiN film 71 and a W film 72 are deposited on a silicon oxide film 64 including the inside of a via-hole 66 by the CVD method and thereafter, the W film 72 and TiN film 71 on the silicon oxide film 64 are etched back to leave only the inside of the via-hole 66 and form a plug 73 . Then, a TiN film 74 , Al-alloy film 75 , and Ti film 76 are deposited on the silicon oxide film 64 including the surface of the plug 73 by the sputtering method and thereafter, the Ti film 76 , Al-alloy film 75 , and TiN film 74 are patterned to form second-layer wirings 77 and 78.
1. A semiconductor integrated circuit device comprising:
a substrate having a first wiring layer;
a first insulating layer located over said first wiring layer;
a plug formed in a via connecting said first wiring layer through said first insulating layer, and wherein said plug includes a titanium nitride film having halogen elements formed by chemical vapor deposition method, and further includes a first refractory metal film;
a second wiring layer formed on said plug, wherein said second wiring layer includes lamination of a conductive film on a second refractory metal film, wherein said second refractory metal contacts said titanium nitride film and is bondable to the halogen element and has a greater capability to trap halogen elements than tungsten.
2. A semiconductor integrated circuit device according to claim 1 , wherein said second refractory metal film is a titanium film, a tantalum film, or a tantalum nitride film.
3. A semiconductor integrated circuit device according to claim 1 , wherein said second refractory metal film is a multiple layer film including a titanium film, a tantalum film, or a tantalum nitride film.
4. A semiconductor integrated circuit device according to claim 1 , wherein said second refractory metal film has a thickness of at least 5 nm.
5. A semiconductor integrated circuit device according to claim 1 , wherein said conductive film is an aluminum film, an aluminum alloy film, a copper film, or a copper alloy film.
6. A semiconductor integrated circuit device according to claim 1 , wherein said first refractory metal film is a tungsten film.
7. A semiconductor integrated circuit device comprising:
a substrate having a first wiring layer;
a first refractory metal layer located on said first wiring layer;
a first insulating layer located over said first refractory metal layer;
a plug formed in a via connecting said first refractory metal layer through said first insulating layer, wherein said plug is comprised of a titanium nitride film including a halogen element formed by a chemical vapor deposition method, and is further comprised of a second refractory metal layer; wherein
said first refractory metal layer contacts said plug and is bondable to the halogen element and has a greater capability to trap the halogen elements than tungsten.
8. A semiconductor integrated circuit device according to claim 7 , wherein said first refractory metal layer is a titanium, a tantalum or tantalum nitride.
9. A semiconductor integrated circuit device according to claim 7 , wherein said first refractory metal layer is a multiple layer including a titanium layer, a tantalum layer or a tantalum nitride layer.
10. A semiconductor integrated circuit device according to claim 7 , wherein said first refractory metal layer has a thickness of at least 5 nm.
11. A semiconductor integrated circuit device according to claim 7 , wherein said first wiring layer is an aluminum layer, an aluminum alloy layer, a copper layer, or a copper alloy layer.
12. A semiconductor integrated circuit device according to claim 7 , wherein said second refractory metal layer is a tungsten layer.
13. A semiconductor integrated circuit device comprising:
a substrate having a first wiring layer comprised of a first refractory metal film;
a first insulating layer located over said first wiring layer, which has a via connecting to said first wiring layer through said first insulating layer;
a plug formed in said via connecting said first wiring layer, wherein said plug is comprised of a titanium nitride film including a halogen element formed by a chemical vapor deposition method, and further comprised of a second refractory metal film;
a second wiring layer formed on said plug, wherein said second wiring layer is comprised of a lamination of a conductive film on a third refractory metal film, wherein said third refractory metal film contacts said titanium nitride film and is bondable to the halogen element and has a greater capability to trap the halogen element than tungsten.
14. A semiconductor integrated circuit device according to claim 13 , wherein said third refractory metal film is a titanium film, a tantalum film or a tantalum nitride film.
15. A semiconductor integrated circuit device according to claim 13 , wherein said third refractory metal film is a multiple layer film including a titanium film, a tantalum film or a tantalum nitride film.
16. A semiconductor integrated circuit device according to claim 13 , wherein said third refractory metal film has a thickness of at least 5 nm.
17. A semiconductor integrated circuit device according to claim 13 , wherein said conductive film is an aluminum film, an aluminum alloy film, a copper film, or a copper ally film.
18. A semiconductor integrated circuit device according to claim 13 , wherein said second refractory metal film is tungsten film.