Patent Assignment
Reel/Frame 019419/0749
Assignment of Assignor's Interest
Recorded: 2007-06-14
Received: 2007-06-14
Pages: 6
Assignor
HITACHI, LTD.
Executed: 2007-03-29
Assignee
ELPIDA MEMORY, INC.
2-1, YAESU 2-CHOME, CHUO-KU,, TOKYO, JPX, JAPAN
Covered Properties
(13)
Semiconductor Integrated Circuit Device Having a Conductive Film Which Contains Metal Atoms Bondable to a Halogen Element
Application:
10/959,634 →
Semiconductor Integrated Circuit Device
Application:
10/767,078 →
Semiconductor Integrated Circuit Device and a Method of Manufacture Thereof
Application:
10/630,695 →
Method for Fabricating Semiconductor Integrated Circuit
Application:
10/453,611 →
Method of Manufacturing a Semiconductor Integrated Circuit Device
Application:
10/365,423 →
Method for Fabricating Semiconductor Integrated Circuit
Application:
10/287,616 →
Semiconductor Device
Application:
10/231,286 →
Semiconductor Integrated Circuit Device, and Method of Manufacturing the Same
Application:
10/157,977 →
Semiconductor Integrated Circuit Device Having an Optimal Circuit Layout to Ensure Stabilization of Internal Source Voltages Without Lowering Circuit Functions and/or Operating Performance
Application:
10/142,897 →
Reference Voltage Generator Permitting Stable Operation
Application:
10/012,522 →
Semiconductor Device
Application:
09/964,669 →
Semiconductor Memory Device and Memory System
Application:
09/939,677 →
Method of Manufacturing Semiconductor Integrated Circuit Device Having a Capacitor
Application:
09/828,201 →