Rhodium electroplated structures and methods of making same
View Patent ↗A halide based stress reducing agent is added to the bath of a rhodium plating solution. The stress reducing agent reduces stress in the plated rhodium, increasing the thickness of the rhodium that can be plated without cracking. In addition, the stress reducing agent does not appreciably decrease the wear resistance or hardness of the plated rhodium.
1. A method of plating rhodium comprising:
placing a cathode in a rhodium plating bath, said bath comprising a halide-based stress reducing agent, said cathode comprising a seed layer formed in an opening in a patternable material disposed on a sacrificial substrate, the opening patterned to define a shape of a contact tip structure; and
forming a rhodium contact structure by electroplating rhodium on said cathode seed layer in said opening, wherein at least a portion of said rhodium plated on said cathode extends at least 100 microns from said cathode.
2. The method of claim 1 , wherein said stress reducing agent comprises chloride.
3. The method of claim 2 , wherein said stress reducing agent comprises chloride in a concentration of at least 10 parts per million.
4. The method of claim 2 , wherein said stress reducing agent comprises chloride in a concentration of at least 30 parts per million.
5. The method of claim 1 , wherein at least a portion of said rhodium plated on said cathode extends at least 500 microns from said surface of said cathode.
6. The method of claim 1 , wherein said rhodium plated on said cathode is substantially crack free.
7. The method of claim 1 , wherein said rhodium plated on said cathode is substantially as wear resistant as rhodium plated from a plating bath without a stress reducing agent.
8. The method of claim 1 , wherein said rhodium plated on said cathode is substantially as hard as rhodium plated from a plating bath without a stress reducing agent.
9. The method of claim 1 , wherein at least a portion of said rhodium plated on said cathode extends at least 2500 microns from said surface of said cathode.
10. The method of claim 1 wherein said substrate comprises an electronic component.
11. The method of claim 1 , wherein said rhodium contact structure comprises a contact portion of a tip structure.
12. The method of claim 11 , wherein said tip structure further comprises materials other than rhodium.
13. The method of claim 11 further comprising securing said tip structure to a probe.
14. The method of claim 13 , wherein said probe is disposed on a probe head.
15. The method of claim 13 further comprising releasing said tip structure from said sacrificial substrate.