High dielectric constant device
View Patent ↗Dielectric material compositions comprising HfO 2 and a second compound are disclosed. The compositions are characterized by at least a part of the compositions being in a cubic crystallographic phase. Further, semiconductor based devices comprising such dielectric material compound and method for forming such compounds are disclosed.
1. A device comprising:
a gate electrode,
a substrate having a top surface underlying the gate electrode, and
a dielectric layer interposed between the gate electrode and the top surface, the dielectric layer comprising a composition including HfO 2 and a second compound, wherein at least a portion of the composition is in a cubic crystallographic phase.
2. The device of claim 1 , further comprising a channel region,
the channel region underlying the dielectric layer.
3. The device of claim 1 , further comprising a second electrode,
the second electrode underlying the dielectric layer.
4. The device of claim 1 , wherein a dielectric constant of the dielectric layer is higher than a dielectric constant of pure HfO 2 .
5. The device of claim 1 , wherein the composition is stable at temperatures below 1200 degrees C.
6. The device of claim 1 , wherein the second compound comprises one of a metal oxide or a metal oxynitride.
7. The device of claim 1 , wherein the second compound comprises Al 2 O 3 .
8. The device of claim 1 , wherein the amount of the second compound is between 1 [mol]% and 50 [mol]%.
9. The device of claim 1 , wherein the dielectric layer has a thickness between 5 and 100 angstroms.
10. The device of claim 1 , wherein the dielectric layer has an equivalent oxide thickness between 0.5 and 15 angstroms.
11. The device of claim 1 , further comprising an interfacial layer between the dielectric layer and the substrate.