Two heat sources for welding silicon
View Patent ↗A method of welding two silicon workpieces ( 20, 22 ) together into one member without the formation of cracks along the weld. A first method passes current ( 34, 36 ) through one or both of the workpieces to heat them to between 600 and 900° C. Then an electric, laser, or plasma welder ( 38, 40 ) passes along the seam ( 24 ) between the workpieces to weld them together. A second method passing current ( 34 ) through a plate ( 60 ), preferably formed of silicon, which either supports the workpieces or is brought into contact with at least one of them, whereby the workpieces are preheated prior to the welding operation.
1. A method of welding together two silicon workpieces, comprising the steps of:
juxtaposing two silicon workpieces along a seam to be welded;
heating from a first heat source at least large areas of said workpieces, to a heating temperature of at least 600°; and
applying heat from a second heat source to a localized area of at least one of said workpieces adjacent to said seam and included within said large areas to a welding temperature above 1416° C. to weld said workpieces together.
2. The method of claim 1 , wherein said heating temperature is no more than 900° C.
3. The method of claim 1 , wherein heating step heats localized areas of both of said workpieces adjacent said seam.
4. The method of claim 1 , wherein said applying step includes passing a current from a welding tip to said localized area.
5. The method of claim 1 , wherein said applying step includes irradiating said localized area with a laser beam.
6. The method of claim 1 , wherein said applying step includes applying a plasma arc to said localized area.
7. The method of claim 1 , wherein at least one of said workpieces comprises virgin polysilicon.
8. The method of claim 7 , wherein both of said workpieces comprises virgin polysilicon.
9. A method of welding together two silicon workpieces, comprising the steps of:
juxtaposing said two silicon workpieces along a seam to be welded;
contacting at least one of said workpieces to a heating element;
passing a current through said heating element to thereby heat said two juxtaposed workpieces to a temperature of at least 600° C.; and
applying heat from a heat source other than said heating element to a portion of said workpieces adjacent to a localized portion of said seam to weld said workpieces together.
10. The method of claim 9 , wherein said temperature is no more than 900° C.
11. The method of claim 9 , wherein said applying step includes passing electrical current from a welding tip through at least one of said workpieces.
12. The method of claim 9 , wherein said applying step includes plasma welding.
13. The method of claim 9 , wherein said heating element supports both of said two silicon workpieces.
14. The method of claim 9 , wherein said heating element comprises a silicon body.
15. The method of claim 14 , wherein said silicon body has portions having a level of impurities other than oxygen, nitrogen, and carbon of less than 1 ppm.
16. The method of claim 14 , wherein said silicon body has a flat surface capable of supporting both of said workpieces.
17. The method of claim 9 , wherein said heating element can be wrapped around one of said workpieces while contacting the other of said workpieces.
18. The method of claim 9 , wherein at least one of said workpieces comprises virgin polysilicon.
19. The method of claim 18 , wherein both of said workpieces comprise virgin polysilicon.