Thin-film transistor structure, method for manufacturing the thin-film transistor structure, and display device using the thin-film transistor structure
View Patent ↗The present invention provides a thin film transistor structure in which at least a trench is formed in an insulating polymer film formed on a substrate. In the thin film transistor structure, a trench formed in the insulating polymer film accommodates a gate wiring constituted of a plurality of conductive layers. Provided also are a method of manufacturing the thin film transistor structure, and a display device including a thin film transistor array composed of the thin film transistors constituted as described above.
1. A thin film transistor structure comprising a substrate, and formed on the substrate a source electrode; a drain electrode; a gate electrode; an active layer; a gate wiring connected to the gate electrode; and an insulating polymer film in which at least a trench is formed, wherein said trench formed in said insulating polymer film accommodates said gate wiring constituted of a conductive layer, so that said gate wiring is self-aligned with said insulating polymer film wherein the gate wiring and insulating polymer film have a thickness which is the same for both the gate wiring and insulating polymer film so that the gate wiring is set to the same level as the insulating polymer film.
2. The thin film transistor structure according to claim 1 , wherein a thickness of said gate wiring is set to 2 micrometers to 15 micrometers, and an aspect ratio of said gate wiring ranges from 0.3 to 3.
3. The thin film transistor structure according to claim 1 , wherein said insulating polymer film is subjected to a treatment for adjusting an optical property thereof.
4. The thin film transistor structure according to claim 1 , wherein said insulating polymer film includes a plurality of polymers.
5. The thin film transistor structure according to claim 1 , wherein said insulating polymer film includes a silicone-containing polymeric substance.
6. The thin film transistor structure according to claim 1 , wherein said gate wiring is constituted of the conductive layer comprising a palladium seed layer and a thicker metal layer wherein the metal is selected from the group consisting of copper, aluminum and silver.
7. The thin film transistor structure according to claim 1 , wherein said thin film transistor is constituted as a bottom gate type thin film transistor or a top gate type thin film transistor.
8. The thin film transistor structure according to claim 1 , wherein said insulating polymer film comprises photosensitivity resin or photosensitive resin composition.
9. A display device including a thin film transistor structure comprising a substrate, and formed on the substrate a source electrode; a drain electrode; a gate electrode; an active layer; a gate wiring connected to said gate electrode; and an insulating polymer film in which at least a trench is formed, and said trench formed in said insulating polymer film accommodates said gate wiring constituted of a conductive layer so that said gate wiring is self-aligned with said insulating polymer film wherein the gate wiring and insulating polymer film have a thickness which is the same for both the gate wiring and insulating polymer film so that the gate wiring is set to the same level as the insulating polymer film.
10. The display device according to claim 9 , wherein a thickness of said gate wiring is set to 2 micrometers to 15 micrometers, and an aspect ratio of said gate electrode ranges from 0.3 to 3.
11. The display device according to claim 9 , wherein said insulating polymer film is subjected to a treatment for adjusting an optical property thereof.
12. The display device according to claim 9 , wherein said insulating polymer film contains photosensitive resin or photosensitive resin composition.
13. The display device according to claim 9 , wherein said insulating polymer film contains a silicone-containing polymeric substance.