Materials and devices for blue phosphorescence based organic light emitting diodes
View Patent ↗An OLED includes a wide gap inert host material doped with two dopants. One of the dopants is an emissive phosphorescent material that can transport either electrons or holes. The other dopant is a charge carrying material that can transport whichever of the electrons and holes that is not transported by the phosphorescent dopant. The materials are selected so that the lowest triplet energy level of the host material and the lowest triplet energy level of the charge carrying dopant material are each at a higher energy level than the lowest triplet state energy level of the phosphorescent dopant material. The device is capable, in particular, of efficiently emitting light in the blue region of the visible spectrum.
1. An organic light emitting device comprising:
an anode layer;
an emissive layer over the anode layer, the emissive layer comprising a host material, a hole transporting dopant material, and a phosphorescent dopant material; and
a cathode layer over the emissive layer;
wherein the HOMO level of the host material is lower than the HOMO level of the hole transporting dopant material and the LUMO level of the host material is higher than the LUMO level of the phosphorescent dopant material.
2. The device of claim 1 , wherein the lowest triplet state energy level of the host material and the lowest triplet state energy level of the hole transporting carrying dopant material are each higher than the lowest triplet state energy level of the phosphorescent dopant material.
3. The device of claim 2 , wherein the lowest triplet state energy level of the host material is higher than the lowest triplet state energy level of the hole transporting dopant material.
4. The device of claim 3 , wherein the host material has an energy gap between the HOMO and the LUMO energy levels of at least about 3.5 eV.
5. The device of claim 2 , wherein the host material comprises a material selected from the group consisting of a di-phenylene, a substituted di-phenylene, a tri-phenylene, a substituted tri-phenylene, a napthalene, a substituted napthalene, a tetraphenylbutadiene, and a substituted tetraphenylbutadiene.
6. The device of claim 2 , wherein the hole transporting dopant material comprises a material selected from the group consisting of a triarylamine, a metal coordination complex, and a donor substituted naphthalene.
7. The device of claim 2 , wherein the phosphorescent dopant material comprises a compound having a structure of general formula:
wherein M is a heavy transition metal; C—N is a cyclometallated ligand; O—X is a coordination ligand wherein X is selected from the group consisting of oxygen, nitrogen, and sulfur; and wherein n equals 1 or 2, and p equals 0 or 1.
8. The device of claim 7 , wherein M is selected from the group consisting of iridium, platinum, osmium, and gold.
9. The device of claim 1 , wherein the host material has an energy gap between the HOMO and the LUMO energy levels of at least about 3.5 eV.
10. The device of claim 1 , wherein the emissive layer emits radiation in the blue region of the visible spectrum.
11. The device of claim 10 , wherein the radiation has an emission peak in the range of from about 430 nm to about 470 nm.
12. The device of claim 11 , wherein the emission peak is at about 450 nm.
13. The device of claim 1 , further comprising a hole injecting layer between the anode layer and the emissive layer.
14. The device of claim 13 , further comprising an electron injecting layer between the emissive layer and the cathode layer.
15. The device of claim 14 , further comprising a hole blocking layer between the emissive layer and the electron injecting layer.
16. The device of claim 15 , further comprising an electron blocking layer between the emissive layer and the hole injecting layer.
17. The device of claim 15 , further comprising an exciton blocking layer between the emissive layer and the hole injecting layer.
18. The device of claim 14 , further comprising an exciton blocking layer between the emissive layer and the electron injecting layer.
19. The device of claim 1 , further comprising an electron injecting layer between the emissive layer and the cathode layer.
20. The device of claim 1 , wherein the host material includes an electron injection region comprising an un-doped region of the host material which is in contact with the anode layer, and a hole injection region comprising an un-doped region of the host material which is in contact with the cathode layer.
21. An organic light emitting device comprising:
an anode layer;
an emissive layer over the anode layer, the emissive layer comprising a host material, an electron transporting dopant material, and a phosphorescent dopant material; and
a cathode layer over the emissive layer;
wherein the HOMO level of the host material is lower than the HOMO level of the phosphorescent dopant material and the LUMO level of the host material is higher than the LUMO level of the electron transporting dopant material.
22. The device of claim 21 , wherein the lowest triplet state energy level of the host material and the lowest triplet state energy level of the electron transporting dopant material are each higher than the lowest triplet state energy level of the phosphorescent dopant material.
23. The device of claim 22 , wherein the lowest triplet state energy level of the host material is higher than the lowest triplet state energy level of the electron transporting dopant material.
24. The device of claim 23 , wherein the host material has an energy gap between the HOMO and the LUMO energy levels of at least about 3.5 eV.
25. The device of claim 22 , wherein the host material comprises a material selected from the group consisting of a di-phenylene, a substituted di-phenylene, a tri-phenylene, a substituted tri-phenylene, a napthalene, a substituted napthalene, a tetraphenylbutadiene, and a substituted tetraphenylbutadiene.
26. The device of claim 22 , wherein the electron transporting dopant material comprises a material selected from the group consisting of an oxidiazole, a traizole, and a cyclooctatetraene.
27. The device of claim 22 , wherein the phosphorescent dopant material comprises a compound having a structure of general formula:
wherein M is a heavy transition metal; C—N is a cyclometallated ligand; O—X is a coordination ligand wherein X is selected from the group consisting of oxygen, nitrogen, and sulfur; and wherein n equals 1 or 2, and p equals 0 or 1.
28. The device of claim 27 , wherein M is selected from the group consisting of iridium, platinum, osmium, and gold.
29. The device of claim 22 , wherein the host material comprises polystyrene, the electron transporting dopant material comprises (4-biphenyl)(4-tertbutylphenyl)oxidiazole (PDB), having the chemical structure
and the phosphorescent dopant material comprises bis(phenylpyridine) iridium acetylacetonate (PPIr), having the chemical structure
and bis(2-phenylbenzothiazole) iridium acetylacetonate (BTIr), having the chemical structure
30. The device of claim 21 , wherein the host material has an energy gap between the HOMO and the LUMO energy levels of at least about 3.5 eV.
31. The device of claim 21 , wherein the emissive layer emits radiation in the blue region of the visible spectrum.
32. The device of claim 31 , wherein the radiation has an emission peak in the range of from about 430 nm to about 470 nm.
33. The device of claim 32 , wherein the emission peak is at about 450 nm.
34. The device of claim 21 , further comprising a hole injecting layer between the anode layer and the emissive layer.
35. The device of claim 34 , further comprising an electron injecting layer between the emissive layer and the cathode layer.
36. The device of claim 35 , further comprising a hole blocking layer between the emissive layer and the electron injecting layer.
37. The device of claim 36 , further comprising an electron blocking layer between the emissive layer and the hole injecting layer.
38. The device of claim 36 , further comprising an exciton blocking layer between the emissive layer and the hole injecting layer.
39. The device of claim 35 , further comprising an exciton blocking layer between the emissive layer and the electron injecting layer.
40. The device of claim 21 , further comprising an electron injecting layer between the emissive layer and the cathode layer.
41. The device of claim 21 , wherein the host material includes an electron injection region comprising an un-doped region of the host material which is in contact with the anode layer, and a hole injection region comprising an un-doped region of the host material which is in contact with the cathode layer.