Semiconductor apparatus and method of manufacturing same
View Patent ↗A semiconductor apparatus that allow miniaturization of a multichip module using an interposer substrate and a method of manufacturing the same are provided. It is configured that an embedded electrode ( 4 ) penetrating through an interposer substrate ( 1 ) is provided, one end thereof is made to be connected to a connection electrode ( 2 ) on which device chips ( 10 ) are flip-chip mounted, and connecting to an unillustrated mounting substrate via a bump electrode ( 5 ), that is, because an electrode connecting the mounting substrate is made to be drawn out from the back surface of the interposer substrate ( 1 ), a multichip module can be miniaturized.
1. A method of manufacturing a semiconductor apparatus constituting a multichip module wherein a plurality of device chips are flip-chip mounted on an interposer substrate, characterized by comprising:
a first step for forming an embedded electrode by filling a contact hall penetrating through a wafer with conductor, said wafer being a base material of said interposer substrate;
a second step for forming wiring including a connection electrode connected to a first end of the embedded electrode and a connection electrode on which said device chips to be flip-chip mounted on a surface of said wafer;
a third step for forming said interposer substrate by grinding and polishing a back surface of said wafer until a second end of said embedded electrode is exposed after said plurality of device chips are flip-chip mounted on said connection electrode formed in the second step; and
a fourth step for providing a bump electrode on the second end of said embedded electrode exposed in the third step.
2. A method for manufacturing a semiconductor apparatus according to claim 1 , characterized in that said interposer substrate comprises a silicon substrate.
3. A method for manufacturing a semiconductor apparatus according to claim 1 wherein after performing the third step, the second end of said embedded electrode does not protrude past the back surface of the wafer.
4. A method for manufacturing a semiconductor apparatus according to claim 1 wherein after performing the third step, the second end of said embedded electrode is substantially even with the back surface of the wafer.
5. A method of manufacturing a semiconductor apparatus constituting a multichip module wherein a plurality of device chips are flip-chip mounted on an interposer substrate, characterized by comprising:
a first step for forming an embedded electrode by filling a contact hail penetrating through a wafer with conductor, said wafer being a base material of said interposer substrate;
a second step for forming wiring including a connection electrode connected to a first end of the embedded electrode, whereby a device chip can be flip-chip mounted to the connection electrode;
a third step for forming said interposer substrate by grinding and polishing a back surface of said wafer until a second end of said embedded electrode is exposed; and
a fourth step for providing a bump electrode on the second end of said embedded electrode exposed in the third step.
6. A method for manufacturing a semiconductor apparatus according to claim 5 , characterized in that said interposer substrate comprises a silicon substrate.
7. A method for manufacturing a semiconductor apparatus according to claim 5 wherein after performing the third step, the second end of said embedded electrode does not protrude past the back surface of the wafer.
8. A method for manufacturing a semiconductor apparatus according to claim 5 wherein after performing the third step, the second end of said embedded electrode is substantially even with the back surface of the wafer.