IP Library Granted Patent US 6,858,946
Granted Patent B2
US 6,858,946 · App. 10/482,012 · Granted Feb 22, 2005

Semiconductor device

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 6,858,946
App. No.
10/482,012
Granted
Feb 22, 2005
Kind
B2
Abstract

A semiconductor device for forming a coil with a high inductance and a high Q value on a semiconductor substrate. A semiconductor device 10 comprises a rectangular semiconductor substrate 12 , pads formed near four corners of this semiconductor substrate 12 , pads 30 formed in the peripheral region along each side other than the corners, and a bonding wire 40 for connecting adjacent pads 20 . The circulation of the bonding wire 40 along the periphery of the semiconductor substrate 12 with the pads 20 formed in the corners constitutes a coil.

Claims (14)

1. A semiconductor device comprising a first pad formed in the proximity of a corner of a rectangular semiconductor substrate and a bonding wire of which at least one end is connected to said first pad,

characterized in that said semiconductor substrate has a second pad to be used for internal circuit wiring in a peripheral region except said corner.

2. The semiconductor device according to claim 1 , characterized in that said bonding wire to be connected to said first pad is formed after finishing formation of the other bonding wire to be connected to said second pad.

3. A semiconductor device comprising a first pad formed in the proximity of a corner of a rectangular semiconductor substrate and a bonding wire of which at least one end is connected to said first pad,

further comprising a second pad, characterized in that said bonding wire is orbitally formed to make a continuous connection between said first and said second pad corresponding to adjacent corners.

4. A semiconductor device comprising a first pad formed in the proximity of a corner of a rectangular semiconductor substrate and a bonding wire of which at least one end is connected to said first pad,

characterized in that a plurality of said first pads are formed corresponding to said one corner, and said bonding wire is orbitally formed to make continuous and multiple connections between ones of said first pads.

5. The semiconductor device according to claim 4 , characterized in that said plurality of first pads formed corresponding to said one corner are placed in an oblique direction against a side adjacent to this corner.

6. A semiconductor device comprising a first pad formed in the proximity of a corner of a rectangular semiconductor substrate and a bonding wire of which at least one end is connected to said first pad,

further comprising a second pad, characterized in that said bonding wire is formed between said first and said second pads corresponding to corners existing on a diagonal line of said rectangular shape.

7. A semiconductor device comprising a first pad formed in the proximity of a corner of a rectangular semiconductor substrate and a bonding wire of which at least one end is connected to said first pad,

characterized in that a coil for an antenna is formed by using said bonding wire connected to said first pad and this coil is connected to a circuit formed on said semiconductor substrate.

8. A semiconductor device comprising a first pad formed in the proximity of a corner of a rectangular semiconductor substrate and a bonding wire of which at least one end is connected to said first pad,

characterized in that a coil for an inductor is formed by using said bonding wire connected to said first pad and this coil is connected to a circuit formed on said semiconductor substrate.

Assignments (6)
RELEASE OF SECURITY INTEREST Recorded Jun 11, 2020
From: ROYAL BANK OF CANADA
To: TESSERA, INC.; INVENSAS BONDING TECHNOLOGIES, INC. (F/K/A ZIPTRONIX, INC.); FOTONATION CORPORATION (F/K/A DIGITALOPTICS CORPORATION AND F/K/A DIGITALOPTICS CORPORATION MEMS); INVENSAS CORPORATION; TESSERA ADVANCED TECHNOLOGIES, INC; DTS, INC.; DTS LLC; PHORUS, INC.; IBIQUITY DIGITAL CORPORATION
Reel/Frame 052920/0001 →
SECURITY INTEREST Recorded Dec 2, 2016
From: INVENSAS CORPORATION; TESSERA, INC.; TESSERA ADVANCED TECHNOLOGIES, INC.; ZIPTRONIX, INC.; DIGITALOPTICS CORPORATION; DIGITALOPTICS CORPORATION MEMS; DTS, LLC; DTS, INC.; PHORUS, INC.; IBIQUITY DIGITAL CORPORATION
To: ROYAL BANK OF CANADA, AS COLLATERAL AGENT
Reel/Frame 040797/0001 →
CHANGE OF NAME Recorded Jun 8, 2011
From: TESSERA INTELLECTUAL PROPERTIES, INC.
To: INVENSAS CORPORATION
Reel/Frame 026423/0286 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 20, 2010
From: NSC CO., LTD.
To: TESSERA INTELLECTUAL PROPERTIES, INC.
Reel/Frame 023821/0070 →
CHANGE OF NAME Recorded Oct 22, 2009
From: NIIGATA SEIMITSU CO., LTD.
To: NSC CO., LTD.
Reel/Frame 023401/0947 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 23, 2003
From: MIYAGI, HIROSHI; OKAMOTO, AKIRA
To: NIIGATA SEIMITSU CO., LTD.
Reel/Frame 015353/0201 →