Semiconductor device utilizing both fully and partially depleted devices
View Patent ↗A semiconductor device such as a DPAM memory device is disclosed. A, Substrate ( 12 ) of semiconductor material is provided with energy band modifying means in the form of a box region ( 38 ) and is covered by an insulating layer ( 14 ). A semi-conductor layer ( 16 ) has source ( 18 ) and drain ( 20 ) regions formed therein to define bodies ( 22 ) of respective field effect transistors. The box region ( 38 ) is more heavily doped than the adjacent body ( 22 ), but less highly doped than the corresponding source ( 18 ) and drain ( 20 ), and modifies the valence and/or conduction band of the body ( 22 ) to increase the amount of electrical charge which can be stored in the body ( 22 ).
1. An integrated circuit device, disposed on or in a first semiconductor region or layer which resides on or above an insulating region or layer, wherein the insulating region or layer is disposed on or over a substrate, the integrated circuit device comprising:
a memory portion including at least one semiconductor memory cell having at least one transistor to constitute the memory cell, the at least one transistor including:
a source region disposed on or in the first semiconductor region;
a drain region disposed on or in the first semiconductor region;
a body region disposed on or in the first semiconductor region and between the source region, the drain region, and the insulating region or layer, wherein the body region is electrically floating;
a gate disposed over the body region; and
wherein the memory cell includes:
a first data state representative of a first charge in the body region; and
a second data state representative of a second charge in the body region;
a non-memory portion including at least one transistor having:
a source region disposed in or on the first semiconductor region;
a drain region disposed in or on the first semiconductor region;
a body region disposed in or on the first semiconductor region and between the source region, the drain region and the insulating region or layer;
a gate disposed over the body region; and
wherein the integrated circuit device further includes a second semiconductor region or layer disposed on or in the substrate and juxtaposed the body region of the at least one transistor of the at least one semiconductor memory cell of the memory portion and separated therefrom by the insulating region or layer, and wherein the second semiconductor region or layer is not disposed on or in a portion of the substrate juxtaposed the body region of the at least one transistor of the non-memory portion.
2. The integrated circuit device of claim 1 wherein the second semiconductor region or layer is connected to a voltage that provides a neutral zone in the body region of the at least one transistor of the at least one semiconductor memory cell of the memory portion.
3. The integrated circuit device of claim 2 wherein the voltage is a constant voltage.
4. The integrated circuit device of claim 1 wherein the second semiconductor region or layer is connected to a voltage that provides a neutral zone in the body region of the at least one transistor of the at least one semiconductor memory cell of the memory portion such that an electric charge may be generated in, stored in and/or eliminated from the neutral zone in the body region of the at least one transistor of the at least one semiconductor memory cell.
5. The integrated circuit device of claim 4 wherein the voltage is a constant or fixed voltage.
6. The integrated circuit device of claim 1 further including a contact area to connect a conductive line to the second semiconductor region or layer.
7. The integrated circuit device of claim 6 wherein the contact area connects the conductive line to the second semiconductor region or layer from above the substrate.
8. The integrated circuit device of claim 1 wherein the second semiconductor region or layer is a P-type silicon region or layer and the substrate is an N-type silicon substrate.
9. The integrated circuit device of claim 1 wherein the integrated circuit device is a DRAM memory device.
10. The integrated circuit device of claim 1 wherein an electric charge is capable of being stared in the body region of the at least one transistor of the at least one semiconductor memory cell in response to a voltage applied to the second semiconductor region or layer.
11. An integrated circuit device, disposed on or in a first semiconductor region or layer which resides on or above an insulating region or layer, wherein the insulating region or layer is disposed on or over a substrate, the integrated circuit device comprising:
a memory portion including a plurality of semiconductor memory cells, each memory cell having at least one transistor to constitute the memory cell, the at least one transistor including:
a source region disposed on or in the first semiconductor region;
a drain region disposed on or in the first semiconductor region;
a body region disposed on or in the first semiconductor region and between the source region, the drain region, and the insulating region or layer, wherein the body region is electrically floating;
a gate disposed over the body region; and
wherein the memory cell includes:
a first data state representative of a first charge in the body region; and
a second data state representative of a second charge in the body region;
a non-memory portion including a plurality of transistors, each transistor including:
a source region disposed in or on the first semiconductor region;
a drain region disposed in or on the first semiconductor region;
a body region disposed in or on the first semiconductor region and between the source region, the drain region, and the insulating region or layer;
a gate disposed over the body region; and
wherein the integrated circuit device further includes a second semiconductor region or layer disposed on or in the substrate and juxtaposed the body region of the at least one transistor of each semiconductor memory cell of the plurality of semiconductor memory cells of the memory portion and separated therefrom by the insulating region or layer, and wherein the second semiconductor region or layer is not disposed on or in a portion of the substrate juxtaposed the body region of each transistor of the plurality of transistors of the non-memory portion.
12. The integrated circuit device of claim 11 wherein the at least one transistor of each semiconductor memory cell of the plurality of semiconductor memory cells of the memory portion and a plurality of transistors of the non-memory portion are NMOS transistors.
13. The integrated circuit device of claim 11 wherein the second semiconductor region or layer is connected to a voltage that provides a neutral zone in the body region of the at least one transistor of each semiconductor memory cell of the plurality of semiconductor memory cells of the memory portion.
14. The integrated circuit device of claim 13 wherein the voltage is a constant or fixed voltage.
15. The integrated circuit device of claim 11 further including a contact area to connect a conductive line to the second semiconductor region or layer.
16. The integrated circuit device of claim 15 wherein the contact area connects the conductive line to the second semiconductor region or layer from above the substrate.
17. The integrated circuit device of claim 11 wherein the integrated circuit device is a DRAM memory device.
18. The integrated circuit device of claim 11 wherein an electric charge is capable of being stored in the body region of the at least one transistor of each semiconductor memory cell of the plurality of semiconductor memory cells in response to a voltage applied to the second semiconductor region or layer.
19. The integrated circuit device of claim 18 further including a contact area to connect a conductive line to the second semiconductor region or layer, wherein the contact area connects the conductive line to the second semiconductor region or layer from above the substrate.
20. The integrated circuit device of claim 19 wherein the voltage is a constant or fixed voltage.