High dielectric constant MOSFET device
View Patent ↗A semiconductor device has an MIS (metal-insulating film-semiconductor) structure, and a film mainly containing Al, O, and N atoms is used on a semiconductor. Alternatively, a semiconductor device has an MIS structure, and a film mainly containing Al, O, and N atoms is provided as a gate insulating film on a channel region between a source and a drain. Characteristics required of a gate insulating film of a 0.05 μm-gate-length-generation semiconductor transistor are satisfied. In particular, no fixed charge is included in the film, and impurity diffusion is reduced.
1. A semiconductor device having an MIS (metal-insulating film-semiconductor) structure,
wherein the semiconductor comprises a film consisting essentially of silicon, and the insulating film comprises a film consisting essentially of Al, O, and N atoms in the form of a solid solution of alumina and aluminum nitride, and
wherein the insulating film has a nitrogen concentration ratio, based on a proportion of nitrogen atoms N/(N+O) in the insulating film, of between 0.1 percent and 10 percent.
2. The semiconductor device according to claim 1 , wherein the semiconductor comprises silicon.
3. The semiconductor device according to claim 1 , wherein the insulating film has a film thickness of 5 nm or less.
4. A semiconductor device having an MIS (metal-insulating film-semiconductor) structure,
wherein the semiconductor comprises a film consisting essentially of silicon, and the insulating film comprises (1-x)AlO 3/2 ·xAlN (where 0<x<1) in the form of a solid solution of alumina and aluminum nitride, and
wherein the semiconductor is Si ( 1-x′-y′)·Ge x ′·C y ′, and wherein at least one of x′ or y′ is non-zero.
5. The semiconductor device according to claim 4 , wherein the semiconductor comprises silicon.
6. The semiconductor device according to claim 4 , wherein the insulating film has a nitrogen concentration ratio, based on the proportion of nitrogen atoms N/(N+O) in the insulating film, of between 0.1 percent and 10 percent.
7. The semiconductor device according to claim 4 , wherein the insulating film has a film thickness of 5 cm or less.
8. A semiconductor device as claimed in claim 4 , wherein the insulating film is (1-y){(1-x)AlO 3/2 .xAlN}.YHfO 2 (0<x<1, y is greater than 0 and equal to or smaller than 0.2).
9. A semiconductor device comprising a transistor including a source region, a drain region, a channel region sandwiched by the source region and the drain region, and a gate electrode provided on the channel region with an insulating film therebetween,
wherein the insulating film has a nitrogen concentration ratio, based on the proportion of nitrogen atoms N/(N+O) in the insulating film, of between 0.1 percent and 10 percent, and
wherein the channel region comprises a film consisting essentially of silicon, and the insulating film comprises a film consisting essentially of Al, O, and N atoms in the form of a solid solution of alumina and aluminum nitride.
10. The semiconductor device according to claim 9 , wherein the channel region comprises silicon.
11. The semiconductor device according to claim 9 , wherein the gate electrode comprises polycrystalline silicon or a silicon-germanium mixed crystal.
12. The semiconductor device according to claim 9 , wherein the gate electrode comprises a metal nitride.
13. The semiconductor device according to claim 9 , wherein the insulating film has a film thickness of 5 nm or less.
14. A semiconductor device as claimed in claim 9 , wherein the insulating film is (1-y){(1-x)AlO 3/2 ·xAlN}·yHfO 2 (0<x<1, y is greater than 0 and equal to or smaller than 0.2).
15. A semiconductor device comprising a transistor including a source region, a drain region, a channel region sandwiched by the source region and the drain region, and a gate electrode provided on the channel region with an insulating film therebetween,
wherein the gate electrode comprises a metal nitride, and
wherein the channel region comprises a film consisting essentially of silicon, and the insulating film comprises (1-x)AlO 3/2 ·xAlN (where 0<x<1) in the form of a solid solution of alumina and aluminum nitride.
16. The semiconductor device according to claim 15 , wherein the channel region comprises silicon.
17. The semiconductor device according to claim 15 , wherein the insulating film has a nitrogen concentration ratio, based on the proportion of nitrogen atoms N/(N+O) in the insulating film, of between 0.1 percent and 10 percent.
18. The semiconductor device according to claim 15 , wherein the insulating film has a film thickness of 5 nm or less.
19. A semiconductor device as claimed in claim 15 , wherein the insulating film is (1-y){(1-x)AlO 3/2 ·xAlN}·YHfO 2 (0<x<1, y is greater than 0 and equal to or smaller than 0.2).
20. A semiconductor device comprising a transistor including a source region, a drain region, a channel region sandwiched by the source region and the drain region, and a gate electrode provided on the channel region with a first insulating film and a second insulating film therebetween,
wherein the first insulating film comprises a silicon oxide film or a silicon oxynitride film,
wherein the gate electrode comprises a metal nitride, and
wherein the second insulating film comprises a film consisting essentially of Al, O, and N atoms in the form of a solid solution of alumina and aluminum nitride.
21. The semiconductor device according to claim 20 , wherein the channel region comprises a film consisting essentially of silicon.
22. The semiconductor device according to claim 20 , wherein the channel region comprises silicon.
23. The semiconductor device according to claim 20 , wherein the first insulating film is present in the side nearer to the channel region than is the second insulating film.
24. A semiconductor device as claimed in claim 20 , wherein the second insulating film is (1-y){(1-x)AlO 3/2 ·xAlN}·YHfO 2 (0<x<1, y is greater than 0 and equal to or smaller than 0.2).
25. A semiconductor device as claimed in claim 20 , wherein the second insulating film has a nitrogen concentration ratio, based on the proportion of nitrogen atoms N/(N+O) in the second insulating film, of between 0.1 percent and 10 percent.
26. A semiconductor device comprising a transistor including a source region, a drain region, a channel region sandwiched by the source region and the drain region, and a gate electrode provided on the channel region with a first insulating film and a second insulating film therebetween,
wherein the first insulating film comprises a silicon oxide film or a silicon oxynitride film, and
wherein the second insulating film comprises (1-y){(1-x)AlO 3/2 .XAlN}.yHfO 2 (0<x1, y is greater than 0 and equal to or smaller than 0.2) in the form of a solid solution of alumina and aluminum nitride.
27. The semiconductor device according to claim 26 , wherein the channel region comprises a film consisting essentially of silicon.
28. The semiconductor device according to claim 26 , wherein the channel region comprises silicon.
29. The semiconductor device according to claim 26 , wherein the first insulating film is present in the side nearer to the channel region than is the second insulating film.
30. The semiconductor device according to claim 27 , wherein the gate electrode comprises polycrystalline silicon or a silicon-gennanium mixed crystal.
31. The semiconductor device according to claim 26 , wherein the gate electrode comprises a metal nitride.
32. A semiconductor device comprising a transistor including a source region, a drain region, a channel region sandwiched by the source region and the drain region, and a gate electrode provided on the channel region with an insulating film therebetween,
wherein the channel region comprises a film consisting essentially of silicon, and the insulating film comprises a film consisting essentially of Al, O and N atoms in the form of a solid solution of alumina and aluminum nitride, and the gate electrode comprises a metal nitride.
33. A semiconductor device having an MIS (metal-insulating flim-semiconductor) structure,
wherein the semiconductor comprises a film consisting essentially of silicon, and the insulating film comprises (1-x)AlO 3/2 .xAlN (where 0 <x<1) in the form of a solid solution of alumina and aluminum nitride, and
wherein the insulating film has a nitrogen concentration ratio, based on the proportion of nitrogen atoms N/(N+O) in the insulating film, of between 0.1 percent and 10 percent.
34. A semiconductor device comprising a transistor including a source region, a drain region, a channel region sandwiched by the source region and the drain region, and a gate electrode provided on the channel region with an insulating film therebetween,
wherein the channel region comprises a film consisting essentially of silicon, and the insulating film comprises (1-x)AlO 3/2 .xAlN (where 0<x<1) in the form of a solid solution of alumina and aluminum nitride, and
wherein, the insulating film has a nitrogen concentration ratio, based on the proportion of nitrogen atoms N/(N+O) in the insulating film, of between 0.1 percent and 10 percent.
35. A semiconductor device comprising a transistor including a source region, a drain region, a channel region sandwiched by the source region and the drain region, and a gate electrode provided on the channel region wit a first insulating film and a second insulating film therebetween,
wherein the first insulating film comprises a silicon oxide film or a silicon oxynitride film,
wherein the gate electrode comprises a metal nitride, and
wherein the second insulating film comprises (1-x)AlO 3/2 .xAlN (where 0<x<1) in the form of a solid solution of alumina and aluminum nitride.
36. A semiconductor device comprising a transistor including a source region, a drain region, a channel region sandwiched by the source region and the drain region, and a gate electrode provided on the channel region with a first insulating film and a. second insulating film therebetween,
wherein the first insulating film comprises a silicon oxide fun or a silicon oxynitride film, and
wherein the second insulating film comprises a film consisting essentially of Al, O, and N atoms in the form of a solid solution of alumina and aluminum nitride, and
wherein the second insulating film has a nitrogen concentration ratio, based on the proportion of nitrogen atoms N/(N+O) in the second insulating film, of between 0.1 percent and 10 percent.
37. The semiconductor device according to claim 36 , wherein the gate electrode comprises polycrystalline silicon or a silicon-germanium mixed crystal.