Semiconductor device with a plurality of semiconductor elements each including a wide band-gap semiconductor
A semiconductor module comprises independently operable segments 1 (semiconductor elements) on a SiC substrate. Each segment 1 comprises a source electrode pad 2 and a gate electrode pad 3 both provided to the principal surface side of the SiC substrate, and a drain electrode pad provided on the back surface side of the SiC substrate. The semiconductor module further comprises an isolation region such as a trench or a Schottky diode for electrically isolating the adjacent segments 1 from each other. Only electrode pads 2 and 3 of each of the segments 1 determined as conforming items by a test are connected to electrode terminals 41 and 43 , respectively.
1. A semiconductor device comprising:
a plurality of semiconductor elements each including an active region made of a wide band-gap semiconductor and at least two electrode pads to which an operating voltage is applied, said plurality of semiconductor elements being operable independently of one another;
a plurality of electrode terminals;
a plurality of connection members for electrically connecting each of the electrode pads of each of a plurality of particular semiconductor elements, which are at least some of the plurality of semiconductor elements, to a corresponding one of the plurality of electrode terminals, and
an isolation region serving as a Schottky diode for electrically isolating the plurality of semiconductor elements from one another,
wherein said plurality of particular semiconductor elements operate in parallel with one another, and
the plurality of semiconductor elements are formed on a common substrate, and at least one of the electrode pads of each of the semiconductor elements other than the particular semiconductor elements of the plurality of semiconductor elements is not electrically connected to either of the plurality of electrode terminals.
2. The semiconductor device of claim 1 , wherein each of the plurality of connection members is composed of a material that is blown out by the flow of a current exceeding a fixed value.
3. The semiconductor device of claim 2 , wherein each of the plurality of connection members is composed of metal.
4. The semiconductor device of claim 1 , wherein the semiconductor elements other than the particular semiconductor elements of the plurality of semiconductor elements include those determined as having a malfunction by a test.
5. The semiconductor device of claim 1 , wherein the semiconductor elements other than the particular semiconductor elements of the plurality of semiconductor elements include those determined as operating well by the test, and the number of the particular semiconductor elements is set at a fixed value.
6. The semiconductor device of claim 1 , wherein the area of each of the semiconductor elements is within the range between 0.1 mm 2 and 50 mm 2 .
7. The semiconductor device of claim 1 , wherein the semiconductor elements include at least either MISFETs or Schottky diodes.
8. The semiconductor device of claim 1 , wherein the wide band-gap semiconductor is silicon carbide.
9. A semiconductor device comprising:
a plurality of semiconductor elements each including an active region made of a wide band-gap semiconductor and at least two electrode pads to which an operating voltage is applied, said plurality of semiconductor elements being operable independently of one another;
a plurality of electrode terminals;
a plurality of connection members for electrically connecting each of the electrode pads of each of a plurality of particular semiconductor elements, which are at least some of the plurality of semiconductor elements, to a corresponding one of the plurality of electrode terminals, and
an isolation region serving as a Schottky diode for electrically isolating the plurality of semiconductor elements from one another,
wherein said plurality of particular semiconductor elements operate in parallel with one another.