Semiconductor light-emitting device using phosphors for performing wavelength conversion
A semiconductor light-emitting device includes substrate ( 3 ), a plurality of light-emitting-element-layers ( 10 a, 10 b, 10 c, . . . ) of semiconductor material formed on the substrate ( 3 ) so as to be isolated from each other and having a wider band gap than the substrate ( 3 ), and phosphors ( 15 a, 15 b, 15 c, . . . ) converting wavelengths of light from the light-emitting-element-layers ( 10 a, 10 b, 10 c, . . . ) into other wavelengths.
1. A semiconductor light-emitting device comprising:
a silicon single crystal substrate;
a plurality of light-emitting-element-layers of a nitride-based compound semiconductor formed on the silicon single crystal substrate to be isolated from each other by an isolation area and having a wider band gap than the silicon single crystal substrate respectively;
a phosphor converting a wavelength of light from the light-emitting-element-layer into another wavelength;
first electrodes provided on top surfaces of the light-emitting-element-layers respectively within the phosphor and electrically connected to the light-emitting-element-layers respectively; and
a second electrode provided on a lower surface of the silicon single crystal substrate and electrically connected to the light-emitting-element-layers.
2. The semiconductor light-emitting device of claim 1 , further comprising a Bragg reflective film between the silicon single crystal substrate and the light-emitting-element-layer.
3. The semiconductor light-emitting device of claim 1 , further comprising a reflective metal film between the substrate and the light-emitting-element-layer.
4. The semiconductor light-emitting device of claim 1 , wherein the isolation area is a groove formed between the light-emitting-element-layers.
5. The semiconductor light-emitting device of claim 1 , wherein the light-emitting-element-layers comprise first to third light-emitting-element-layers emitting excitation light of the same wavelengths.
6. The semiconductor light-emitting device of claim 5 , wherein the phosphor comprises a first phosphor provided on the first light-emitting-element-layer to convert the wavelength of the excitation light from the first light-emitting-element-layer into a first wavelength.
7. The semiconductor light-emitting device of claim 6 , wherein the phosphor further comprises a second phosphor provided on the second light-emitting-element-layer to convert the wavelength of the excitation light from the second light-emitting-element-layer into a second wavelength differing from the first wavelength.
8. The semiconductor light-emitting device of claim 7 , wherein the phosphor further comprises a third phosphor provided on the third light-emitting-element-layer to convert wavelength of the excitation light from the third light-emitting-element-layer into a third wavelength differing from the first and second wavelengths.
9. A light-emitting display implemented by a plurality of pixels on a silicon single crystal substrate, each of the pixels comprising:
a plurality of light-emitting-element-layers of a nitride-based compound semiconductor formed on the silicon single crystal substrate so as to be isolated from each other by an isolation area and having a wider band gap than the silicon single crystal substrate respectively;
a phosphor converting a wavelength of light from the light-emitting-element-layer into another wavelength;
first electrodes provided on top surfaces of the light-emitting-element-layers respectively within the phosphor and electrically connected to the light-emitting-element-layers respectively; and
a second electrode provided on a lower surface of the silicon single crystal substrate and electrically connected to the light-emitting-element-layers.
10. The light-emitting display of claim 9 , further comprising a Bragg refractive film disposed between the silicon single crystal substrate and the light-emitting-element-layer.
11. The light-emitting display of claim 9 , further comprising a semiconductor device in the silicon single crystal substrate for controlling emission from the light-emitting-element-layer.
12. The light-emitting display of claim 9 , wherein the plurality of light-emitting-element-layers comprises first to the third light-emitting-element-layers emitting excitation light of the same wavelengths.
13. The light-emitting display of claim 12 , wherein the phosphor comprises a first phosphor provided on the first light-emitting-element-layer to convert the wavelength of the excitation light from the first light-emitting-element-layer into a first wavelength.
14. The light-emitting display of claim 13 , wherein the phosphor further comprises a second phosphor provided on the second light-emitting-element-layer to convert the wavelength of the excitation light from the second light-emitting-element-layer into a second wavelength differing from the first wavelength.
15. The light-emitting display of claim 14 , wherein the phosphor further comprises a third phosphor provided on the third light-emitting-element-layer to convert the wavelength of the excitation light from the third light-emitting-element-layer into a third wavelength differing from the first and second wavelengths.
16. A semiconductor light-emitting device comprising:
a substrate;
a plurality of light-emiffing-element-layers of semiconductor material formed on the substrate to be isolated from each other and having a wider band gap than the substrate respectively;
a phosphor converting a wavelength of light from the light-emitting-element-layer into other wavelength;
first electrodes provided on top surfaces of the light-emitting-element-layers respectively within the phosphor and electrically connected to the light-emitting-element-layers respectively; and
a second electrode provided on a lower surface of the silicon single crystal substrate and electrically connected to the light-emitting-element-layers.