Method of generating extreme ultraviolet radiation
View Patent ↗A method of generating extreme ultraviolet radiation, wherein the radiant medium is a plasma generated by processing a basic material, and the basic material distribution of the radiant medium consists at least of one halogenide of the metals lithium (Li), indium (In), tin (Sn), antimony (Sb), tellurium (Te), aluminum (Al) and/or a halogen 5 and/or an inert gas, with the exception of halogenides on the basis of lithium (Li) and chlorine (Cl) as well as fluorine (F).
1. A method of generating extreme ultraviolet radiation, comprising:
providing a radiant medium having a basic material distribution, the basic material distribution including at least one halogenide of a metal which is selected from the group consisting of lithium (Li), indium (In), tin (Sn), antimony (Sb), tellurium (Te) and aluminum (Al), the halogenide not being a halogenide of chlorine (Cl) or fluorine (F) when the metal selected is lithium (Li), or including a halogen and said at least one halogenide of a metal, except for those combinations of halogenides and halogens wherein said halogen is chlorine (Cl) or fluorine (F) and the selected metal of the at least one halogenide of a metal, is lithium (Li), and,
generating a plasma of such radiant medium.
2. The method of claim 1 , wherein extreme ultraviolet radiation is generated in the range from approximately 5 nm to approximately 50 nm.
3. The method of claim 1 , wherein a plasma with an electron temperature of at least 10 eV is generated.
4. The method of claim 1 , wherein at least an inert gas is added to the basic material distribution.
5. The method of claim 1 , wherein an evaporating halogenide is added to the basic material distribution.
6. The method of claim 5 , wherein said evaporating halogenide is a metal-based halogenide.
7. The method of claim 6 , wherein said metal-based halogenide is a halogenide of gallium (Ga), indium (In) or thallium (Ti).
8. The method of claim 1 , wherein at least a pure halogen is added to the basic material distribution in a quantity such that an oversaturation condition of the halogen is obtained.
9. The method of claim 1 , wherein the main emission volume of the extreme ultraviolet radiation is below 30 mm 3 .
10. The method of claim 1 , wherein the extreme ultraviolet radiation is emitted in a wavelength range from 10 to 15 nm.
11. The method of claim 1 , wherein the step of generating a plasma of such radiant medium comprises generating the extreme ultraviolet radiation from a discharge taking place between two electrodes.
12. The method of claim 1 , wherein the means for generating the EUV radiation-emitting plasma volume is at least one laser beam.
13. The method of claim 1 , wherein a mean vapor pressure of the metal halogenide lies in the range from approximately 1 to 1000 Pa.
14. The method of claim 1 , wherein the basic material distribution comprises at least a metal halogenide in liquid form.
15. The method of claim 13 , wherein the step of providing the radiant medium includes providing said liquid form as one or more droplets or a jet.
16. The method of claim 1 , wherein the basic material distribution comprises solid or liquid metal halogenide particles, and the step of providing the radiant medium includes providing said solid or liquid particles in a gas stream.
17. The method of claim 1 , wherein the basic material distribution is at least partly gaseous.
18. The method of claim 1 , wherein the plasma is generated in a pulsed mode of operation.
19. The method of claim 1 , wherein the plasma is generated in a continuous mode of operation.
20. The method of claim 1 , wherein the plasma is generated by a hollow cathode-triggered discharge.
21. The method of claim 1 , wherein the plasma is formed by a pinch discharge.
22. The method of claim 20 wherein generating the plasma in the radiant medium comprises generating the plasma at a temperature of 200-850° K at a 10 −8 to 1 bar partial pressure of metal halogenide.
23. A light emitting device generating extreme ultraviolet radiation, the device comprising:
a radiant medium capable of being excited to a plasma state, the radiant medium having a basic material distribution which includes:
(i) at least one halogenide of a metal selected from the group consisting of lithium (Li), indium (In), tin (Sn), antimony (Sb), tellurium (Te), aluminum (Al), or
(ii) a halogen and said at least one halogenide of a metal,
(iii) except for those combinations of halogenides and halogens wherein said halogen is one of chlorine (Cl) and fluorine (F) and the selected metal is lithium (Li), and
(iv) except for those combinations of halogenides and halogens wherein the at least one halogenide is a halogenide of chlorine (Cl) or fluorine (F), and said selected metal is lithium (Li).
24. The light emitting device of claim 23 wherein the device is configured to maintain the plasma at a temperature of 200-850° K at a 10 −8 to 1 bar partial pressure of metal halogenide.
25. A method of generating extreme ultraviolet radiation, comprising:
providing a radiant medium having a basic material distribution, the basic material distribution including iodine (I), and,
generating a plasma of such radiant medium,
wherein a mean vapor pressure of the iodine lies in the range from approximately 1 to 1000 kPa.