Method of protecting semiconductor device and protection apparatus for semiconductor device using the same
A protection apparatus for a semiconductor device includes a DC power source, a load, a semiconductor device arranged between the DC power source and the load and switches the load between a driving state and a stopping state, a comparator comparing a voltage drop across the semiconductor device with a predetermined reference voltage, and a cut off unit cutting a conduction of the semiconductor device between the DC power source and the load when the voltage drop is greater than the predetermined reference voltage. A constant of the circuit element is set so that the reference voltage is not greater than a critical voltage. The critical voltage is a product of the on-resistance of the semiconductor device when its channel temperature is at an upper limit of the permissible temperature, and a minimum current value which causes the channel temperature to reach the upper limit of the permissible temperature by the self-heating due to Joule heat.
1. A method of protecting a semiconductor device, comprising the steps of:
providing a DC power source, a load, and a semiconductor device arranged between the DC power source and the load;
providing a circuit element connected to the semiconductor device;
switching the semiconductor device so that the load is changed between a driving state and a stopping state;
cutting off a conduction of the semiconductor device between the DC power source and the load when a voltage drop across the semiconductor device exceeds a predetermined reference voltage; and
setting a constant of the circuit element so that the reference voltage is not greater than a critical voltage,
wherein the critical voltage is a product of an on-resistance of the semiconductor device when its channel temperature is at an upper limit of a permissible temperature, and a minimum current value which causes the channel temperature to reach the upper limit of the permissible temperature by the self-heating due to Joule heat.
2. The method as set forth in claim 1 , wherein when there are changes in the on-resistance for the specification of the semiconductor device, the minimum value among the changes of the on-resistance is employed.
3. A protection apparatus for a semiconductor device comprising:
a DC power source;
a load;
a semiconductor device, arranged between the DC power source and the load, and changes the load between a driving state and a stopping state;
a circuit element, connected to the semiconductor device;
a comparator, comparing a voltage drop across the semiconductor device with a predetermined reference voltage; and
a cut off section, cutting a conduction of the semiconductor device between the DC power source and the load when the voltage drop is greater than the predetermined reference voltage,
wherein a constant of the circuit element is set so that the reference voltage is not greater than a critical voltage; and
wherein the critical voltage is a product of the on-resistance of the semiconductor device when its channel temperature is at an upper limit of a permissible temperature, and a minimum current value which causes the channel temperature to reach the upper limit of the permissible temperature by the self-heating due to Joule heat.
4. The protection apparatus as set forth in claim 3 , wherein when there are changes in the on-resistance for the specification of the semiconductor device, the minimum value among the changes of the on-resistance is employed.