IP Library › Granted Patent US 8,367,552
Granted Patent B2
US 8,367,552 · App. 10/526,422 · Granted Feb 5, 2013

Method for fabrication of in-laid metal interconnects

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Quick Facts
Patent No.
US 8,367,552
App. No.
10/526,422
Granted
Feb 5, 2013
Kind
B2
Abstract

The present invention relates to a method for fabrication of in-laid metal interconnects. The method comprises the steps of providing a substrate with a dielectric material on top thereof, depositing a protection layer on top of the dielectric material, depositing a sacrificial layer on top of the protection layer, the sacrificial layer having a mechanical strength that is lower than the mechanical strength of the protection layer, making an opening) through the sacrificial layer, through the protection layer and into the dielectric material, depositing a barrier layer in the opening and on the sacrificial layer, depositing metal material on the barrier layer, the metal material filling the opening, removing portions of the metal material existing beyond the opening by means of polishing, and removing the barrier layer and the sacrificial layer in one polishing step.

Claims (18)

1. A method for fabrication of in-laid metal structures, comprising the steps of:

providing a substrate with a dielectric material having a dielectric constant less than 2.6 on top thereof,

depositing a protection layer on top of the dielectric material,

depositing a sacrificial layer on top of the protection layer, the sacrificial layer having a mechanical strength which is lower than the mechanical strength of the protection layer,

making an opening through the sacrificial layer, through the protection layer and into the dielectric material,

depositing a barrier layer in the opening and on the sacrificial layer

depositing metal material on the barrier layer, the metal material filling the opening,

removing portions of the metal material existing beyond the opening by means of polishing, and

removing the sacrificial layer and portions of the barrier layer existing beyond the opening in one polishing step.

2. A method according to claim 1 , wherein the portions of the metal material existing beyond the opening, the barrier layer and the sacrificial layer are removed in one polishing step.

3. A method according to claim 1 , wherein the one polishing step makes use of one consumable set.

4. A method according to claim 1 , wherein the polishing step is a step of chemical mechanical polishing (CMP).

5. A method according to claim 1 , wherein the adhesion between the sacrificial layer and the protection layer is weaker than the adhesion between the protection layer and the dielectric material.

6. A method according to claim 1 , wherein the sacrificial layer is a low-k material.

7. A method according to claim 1 , wherein the dielectric material comprises a low-k material.

8. A method according to claim 1 , wherein the step of depositing metal material comprises depositing copper, aluminum, silver, gold, or tungsten.

9. A method according to claim 1 , wherein the step of depositing metal material comprises depositing metal material by chemical vapor deposition.

10. A method for manufacturing a semiconductor device using a method for fabrication of in-laid metal structures according to claim 1 .

Assignments (11)
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12298143 PREVIOUSLY RECORDED ON REEL 038017 FRAME 0058. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Oct 22, 2019
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 051030/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12298143 PREVIOUSLY RECORDED ON REEL 039361 FRAME 0212. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Oct 22, 2019
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 051029/0387 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12298143 PREVIOUSLY RECORDED ON REEL 042762 FRAME 0145. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Oct 22, 2019
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 051145/0184 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12298143 PREVIOUSLY RECORDED ON REEL 042985 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Oct 22, 2019
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 051029/0001 →
RELEASE OF SECURITY INTEREST Recorded Sep 10, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 050745/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 22, 2017
From: KONINKLIJKE PHILIPS ELECTRONICS N.V.
To: PHILIPS SEMICONDUCTORS INTERNATIONAL B.V.
Reel/Frame 043955/0001 →
CHANGE OF NAME Recorded Sep 22, 2017
From: PHILIPS SEMICONDUCTORS INTERNATIONAL B.V.
To: NXP B.V.
Reel/Frame 043951/0436 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12681366 PREVIOUSLY RECORDED ON REEL 039361 FRAME 0212. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded May 9, 2017
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 042762/0145 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12681366 PREVIOUSLY RECORDED ON REEL 038017 FRAME 0058. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded May 9, 2017
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 042985/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12092129 PREVIOUSLY RECORDED ON REEL 038017 FRAME 0058. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Jul 14, 2016
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 039361/0212 →
SECURITY AGREEMENT SUPPLEMENT Recorded Mar 7, 2016
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 038017/0058 →