Process for producing photoresist composition, filter, coater and photoresist composition
A technique to acquire a photoresist composition which can reduce occurrence of defects of a resist pattern after development is provided. Further, a technique to obtain a photoresist composition having excellent storage stability characteristics as a resist solution (storage stability); and a technique to obtain a photoresist composition which reduces the change of sensitivity and resist pattern size after treatment almost completely are provided. A photoresist composition containing a resin component (A), an acid-generating component (B) for generating an acid under exposure, and an organic solvent (C) is passed through a first filter 2 a equipped with a first membrane having zeta potential of more than −20 mV but no more than 15 mV in distilled water of pH 7.0.
1. A method for manufacturing a chemically amplified photoresist composition comprising passing a chemically amplified photoresist composition obtained by polymerizing monomers having different polarities containing a resin component (A), an acid-generating component (B) for generating an acid under exposure, and an organic solvent (C) through a first filter equipped with a first membrane having a critical surface tension of 70 dyne/cm or more, and having a negative zeta potential in distilled water of pH 7.0; and
passing the chemically amplified photoresist composition through a second filter equipped with a second membrane made of polyethylene or polypropylene at least one of before or after passing the chemically amplified photoresist composition through the first filter.
2. The method for manufacturing the chemically amplified photoresist composition according to claim 1 , wherein the pore diameter of at least one of the first membrane and second membrane is 0.02 μm or more and 0.1 μm or less.
3. The method for manufacturing the chemically amplified photoresist composition according to claim 1 , wherein the pore diameter of the first membrane is within the range from 0.02 μm to 0.04 μm.
4. The method for manufacturing the chemically amplified photoresist composition according to claim 3 , wherein the pore diameter of the first membrane is 0.04 μm.
5. The method for manufacturing the chemically amplified photoresist composition according to claim 1 , wherein the component (A) is a resin having a construction unit derived from a (meth)acrylate ester.
6. The method for manufacturing the chemically amplified photoresist composition according to claim 5 , wherein the component (A) has a construction unit (a1) derived from a (meth)acrylate ester having an acid-dissociable dissolution inhibiting group, and a construction unit (a2) derived from a (meth)acrylate ester having a lactone ring.
7. The method for manufacturing the chemically amplified photoresist composition according to claim 6 , wherein the component (A) has a construction unit (a1) derived from a (meth)acrylate ester having an acid-dissociable dissolution inhibiting group, a construction unit (a2) derived from a (meth)acrylate ester having a lactone ring, and a construction unit (a3) derived from a (meth)acrylate ester having a hydroxyl group and/or a cyano group.
8. The method for manufacturing the chemically amplified photoresist composition according to claim 7 , wherein the component (A) has a construction unit (a1) derived from a (meth)acrylate ester having an acid-dissociable dissolution inhibiting group, a construction unit (a2) derived from a (meth)acrylate ester having a lactone ring, a construction unit (a3) derived from a (meta)acrylate ester having a hydroxyl group and/or a cyano group, and a construction unit (a4) which is different from the construction units (a1) to (a3) and is derived from an aliphatic polycyclic group-containing (meth)acrylate ester.
9. A method for manufacturing a chemically amplified photoresist composition comprising passing a chemically amplified photoresist composition containing a resin component obtained by polymerizing monomers having different polarities (A), an acid-generating component (B) for generating an acid under exposure, and an organic solvent (C) through a first filter equipped with a first membrane; and
passing the chemically amplified photoresist composition through a second filter equipped with a second membrane made of polyethylene or polypropylene at least one of before or after passing the chemically amplified photoresist composition through the first filter, wherein
the component (A) has a construction unit (a1) derived from a (meth)acrylate ester having an acid-dissociable dissolution inhibiting group, a construction unit (a2) derived from a (meth)acrylate ester having a lactone ring, a construction unit (a3) derived from a (meth)acrylate ester having a hydroxyl group and/or a cyano group, and a construction unit (a4) derived from at least one of aliphatic polycyclic group-containing (meth)acrylate esters represented by general formulae (IX) to (XI) shown below:
wherein R is a hydrogen atom or a methyl group,
wherein R is a hydrogen atom or a methyl group,
wherein R is a hydrogen atom or a methyl group,
and wherein a filter equipped with a membrane having a pore diameter of 0.04 μm or less and made of a NYLON membrane is used as the first filter.
10. A method for manufacturing a chemically amplified photoresist composition according to any one of claims 5 to 8 , wherein the quantity of the construction unit derived from a (meth)acrylate ester is 15 mol % or more.
11. A method for manufacturing a chemically amplified photoresist composition according to claim 1 , wherein a filter equipped with a first membrane having a pore diameter of 0.04 μm or less and made of a NYLON membrane is used as the first filter.