Method of manufacturing a light emitting device with a doped active layer
View Patent ↗Oxygen is doped in a quantum well active layer. First, an n-type In 0.02 Ga 0.98 N barrier layer 550 of 10 nm is formed by supplying TMG at 10 sccm, TMI at 30 sccm, O 2 at 20 sccm, and NH 3 at 10 slm, on the n-type GaN optical guide layer 405 . Next, a molar flow rate of TMI is increased to 50 sccm, and an undoped In 0.2 Ga 0.8 N well layer 553 of 3 nm is formed. This process is repeated three cycles, and finally, the process is completed with the n-type In 0.02 Ga 0.98 N barrier layer 550 . A p-type Al 0.2 Ga 0.8 N cap layer 407 whose thickness is 20 nm is formed by supplying TMG at 15 sccm, TMA at 5 sccm, and (EtCp) 2 Mg at 5 sccm and NH 3 at 10 slm, on a multi-quantum well structure active layer 420 formed in this way.
1. A method of manufacturing a semiconductor light emitting device, comprising:
forming a light emitting layer composed of a Group III nitride semiconductors on a substrate by a vapor phase deposition method, by using a doping gas containing an element in Periodic Table Group 6B, and a mixed gas including a Group III precursor gas and a nitrogen source gas, wherein
a molar flow rate of the doping gas is made excessive more than a molar flow rate of the Group III precursor gas;
wherein the step of forming said light emitting layer is executed after forming Group III nitride semiconductor layers containing an element in Periodic Table Group 4B as an impurity on said substrate by a vapor phase deposition method; and
wherein after forming Group III nitride semiconductor layers containing an element in Periodic Table Group 4B as an impurity, a film-forming gas used for forming the Group III nitride semiconductor layers is purged, and next, said light emitting layer is formed.
2. The method of manufacturing a semiconductor light emitting device according to claim 1 , wherein the element in Periodic Table Group 6B is O or S.
3. A method of manufacturing a semiconductor light emitting device, comprising:
forming a light emitting layer composed of a Group III nitride semiconductors on a substrate by a vapor phase deposition method, by using a doping gas containing an element in Periodic Table Group 6B, and a mixed gas including a Group III precursor gas and a nitrogen source gas,
wherein a molar flow rate of the doping gas is made excessive more than a molar flow rate of the Group III precursor gas, and
wherein said light emitting layer has a quantum well structure, the step of forming said light emitting layer includes a step of forming well layers and barrier layers alternately, and said doping gas is introduced at the time of forming said barrier layers.
4. The method of manufacturing a semiconductor light emitting device according to claim 3 , wherein the element in Periodic Table Group 6B is O or S.