Patent Assignment
Reel/Frame 024524/0463
Assignment of Assignor's Interest
Recorded: 2010-06-11
Received: 2010-06-11
Pages: 8
Assignor
NEC CORPORATION
Executed: 2010-03-31
Assignee
NEC ELECTRONICS CORPORATION
1753 SHIMONUMABE, NAKAHARA-KU,, KAWASAKI, KANAGAWA, JPX, 211-8668, JAPAN
Covered Properties
(49)
Semiconductor Device
Application:
12/529,879 →
System, Method and Program for Determining Worst Condition of Circuit Operation
Application:
12/527,862 →
Dielectric, Capacitor Using Dielectric, Semiconductor Device Using Dielectric, and Manufacturing Method of Dielectric
Application:
12/526,238 →
Inductor
Application:
12/523,578 →
Electrode Structure, Semiconductor Element, and Methods of Manufacturing the Same
Application:
12/519,698 →
Semiconductor Memory Device and Semiconductor Device
Application:
12/518,148 →
Semiconductor Device, and Its Manufacturing Method
Application:
12/447,113 →
Semiconductor device manufacturing method and semiconductor device
Application:
12/311,428 →
Method of Forming a Porous Insulation Film
Application:
12/374,390 →
Inductor Element, Inductor Element Manufacturing Method, and Semiconductor Device with Inductor Element Mounted Thereon
Application:
12/375,944 →
Semiconductor Device and Method for Manufacturing the Same
Application:
12/375,708 →
Semiconductor Device, Integrated Circuit, and Semiconductor Manufacturing Method
Application:
12/302,121 →
Formation Method of Metallic Compound Layer, Manufacturing Method of Semiconductor Device, and Formation Apparatus for Metallic Compound Layer
Application:
12/227,714 →
Amplification Circuit
Application:
12/298,185 →
Semiconductor Memory Device and Method of Manufacturing the Same
Application:
11/992,961 →
Method for Forming Interlayer Dielectric Film, Interlayer Dielectric Film, Semiconductor Device and Semiconductor Manufacturing Apparatus
Application:
12/212,396 →
Multi-Band Frequency Synthesizer Circuit and Method
Application:
12/224,780 →
Semiconductor Device and Method of Manufacturing Semiconductor Device
Application:
12/087,049 →
Semiconductor Device and Manufacturing Method Thereof
Application:
12/279,379 →
Variation Simulation System, Method for Determining Variations, Apparatus for Determining Variations and Program
Application:
12/278,884 →
Dual Damascene Multilayer Interconnect Structure Having Film Density of the Wiring Groove Sidewall Portion Away from via Hole Contact Lower Than the Sidewall Portion Directly Above the via Hole Contact.
Application:
12/160,149 →
Mosfet, Method of Fabricating the Same, Cmosfet, and Method of Fabricating the Same
Application:
12/159,295 →
Semiconductor Memory Device, Method of Driving the Same and Method of Manufacturing the Same
Application:
12/095,866 →
Mosfet and Production Method of Semiconductor Device
Application:
11/990,747 →
Method for Manufacturing Semiconductor Device
Application:
11/990,464 →
Multilayer Wiring Structure, Semiconductor Device, Pattern Transfer Mask and Method for Manufacturing Multilayer Wiring Structure
Application:
11/908,099 →
Semiconductor Device with Fin-Type Field Effect Transistor and Manufacturing Method Thereof
Application:
11/632,352 →
Mos Semiconductor Device Isolated by a Device Isolation Film
Application:
11/386,833 →
Nitride Based Semiconductor Light-Emitting Device
Application:
11/232,019 →
Semiconductor Device and Method of Fabricating the Same
Application:
11/182,150 →
A Metod of Manufacturing a Light Emitting Device with a Doped Active Layer
Application:
10/537,489 →
Semiconductor Device, Production Method and Production Device Thereof
Application:
10/521,311 →
Semiconductor Device and Its Manufacturing Method
Application:
10/519,084 →
Semiconductor Device and a Method for the Manufacture Thereof
Application:
10/975,884 →
Semiconductor Device and Its Manufacturing Method
Application:
10/511,423 →
Mos Semiconductor Device
Application:
10/498,377 →
Semiconductor Device and Method of Manufacturing the Same
Application:
10/476,978 →
Soi Semiconductor Device with Improved Halo Region and Manufacturing Method of the Same
Application:
10/490,599 →
Phase-Shifted Distributed Feedback Type Semiconductor Laser Diode Capable of Improving Wavelength Chirping and External Reflection Return Light Characteristics and Method for Manufacturing the Same
Application:
10/336,520 →
Semiconductor Device and a Process for Manufacturing a Complex Oxide Film
Application:
10/242,725 →
Semiconductor Device and Method of Fabricating the Same
Application:
10/163,984 →
Method for Vapor Deposition of a Metal Compound Film
Application:
10/147,977 →
Method of Manufacturing a Semiconductor Device Capable of Etching a Multi-Layer of Organic Films at a High Selectivity
Application:
10/080,848 →
Copper Interconnection
Application:
10/009,869 →
Nitride Based Semiconductor Light-Emitting Device
Application:
09/944,186 →
Semiconductor Laser and System for and Method of Performing Digital Optical Communications Using Such Semiconductor Laser
Application:
09/928,663 →
Semiconductor Device Including a Mis Transistor
Application:
09/852,658 →
Method for Vaporization of Liquid Organic Feedstock and Method for Growth of Insulation Film
Application:
09/838,343 →
Nitride Based Semiconductor Device and Method of Forming the Same
Application:
09/810,546 →