Semiconductor device and a method for the manufacture thereof

1. The semiconductor device comprising a crystalline substrate, and a semiconductor layer laminated on said crystalline substrate; wherein

at least one side of said semiconductor device includes a first surface including the crystal face of said crystalline substrate, and a second surface including a surface other than the crystal face of said crystalline substrate;

said semiconductor device further comprising a light guide, and

said side is formed along said light guide.

2. The semiconductor device according to claim 1 ; wherein

said first surface is a cleavage plane, and

said second surface is a surface formed by a method other than cleavage.

3. The semiconductor device according to claim 1 ; wherein

at least one of the lateral ends of said side is composed of said first surface, and

the other region is composed of said second surface.

4. The semiconductor device according to claim 1 ; wherein further having a light outgoing surface or a reflective surface formed substantially perpendicularly to the light guide direction, and the area in the vicinity of said light outgoing surface or said reflective surface in said side is composed of said first surface.

5. The semiconductor device according to claim 4 ; wherein said reflective surface is subjected to mirror coating.

6. The semiconductor device according to claim 1 ; wherein said crystalline substrate has a crystal structure which is hexagonal system.

7. The semiconductor device according to any of claim 1 ; wherein

said crystalline substrate consists of a group III nitride semiconductor material.

8. The semiconductor device according to any of claim 1 ; wherein

said second surface is a surface formed by dry etching and scribing.

9. The semiconductor device according to claim 1 ; wherein

said second surface is a surface formed by selective growing and scribing.

10. A method for manufacturing a semiconductor device as claimed in claim 1 ; comprising steps of;

forming a semiconductor layer on a crystalline substrate;

selectively removing said crystalline substrate or said semiconductor layer, and forming a plurality of grooves extending in a direction on a part of a device separating region;

cleaving said crystalline substrate and said semiconductor layer along a surface substantially orthogonal to the extending direction of said grooves, and not intersecting said grooves to form a bar; and

performing breaking along the extending direction of said grooves, cutting the crystalline substrate and the semiconductor layer along said grooves, and cleaving the crystalline substrate and the semiconductor layer in the area where said grooves are not formed to separate devices and to form the semiconductor device.

11. A method for manufacturing a semiconductor device according to claim 10 , wherein

the method further comprises a step of forming scribed grooves overlying said grooves, prior to the step of cleaving said crystalline substrate and said semiconductor layer to form a bar.

12. A method for manufacturing a semiconductor device as claimed in claim 1 ; comprising steps of;

for forming a plurality of striped masks extending in a direction on a crystalline substrate;

selectively growing a semiconductor layer while forming grooves from the opening of said mask to immediately above said mask;

cleaving said crystalline substrate and said semiconductor layer along a surface substantially orthogonal to the extending direction of said grooves, and not intersecting said grooves to form a bar; and

performing breaking along the extending direction of said grooves, cutting the crystalline substrate and the semiconductor layer along said grooves, and cleaving the crystalline substrate and the semiconductor layer in the area where said grooves are not formed to separate devices and to form the semiconductor device.

13. A method for manufacturing a semiconductor device according to claim 12 , wherein

the method further comprises a step of forming scribed grooves overlying said grooves, prior to the step of cleaving said crystalline substrate and said semiconductor layer to form a bar.