IP Library › Granted Patent US 6,642,546
Granted Patent Utility
US 6,642,546 · Confirmation No. 6778

NITRIDE BASED SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME

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2003-09-03 IFEE Issue Fee Payment (PTO-85B) 1 View
2003-09-03 LET. Miscellaneous Incoming Letter 1 View
2003-05-15 IDS Information Disclosure Statement (IDS) Form (SB08) 3 View
2003-05-15 FOR Foreign Reference 61 View
2001-03-19 TRNA Transmittal of New Application 2 View
2001-03-19 ADS Application Data Sheet 2 View
2001-03-19 SPEC Specification 63 View
2001-03-19 CLM Claims 13 View
2001-03-19 ABST Abstract 1 View
2001-03-19 DRW Drawings-only black and white line drawings 16 View
2001-03-19 OATH Oath or Declaration filed 2 View
2001-03-19 TRNA Transmittal of New Application 2 View
2001-03-19 ADS Application Data Sheet 2 View
2001-03-19 SPEC Specification 63 View
2001-03-19 CLM Claims 13 View
2001-03-19 ABST Abstract 1 View
2001-03-19 DRW Drawings-only black and white line drawings 16 View
2001-03-19 OATH Oath or Declaration filed 2 View
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Quick Facts
Patent No.
US 6,642,546
App. No.
09/810,546
Filed
2001-03-19
Granted
2003-11-04
Pub. No.
US20010030316A1
Art Unit
2811
PTA
-120 days