Parasitic capacitance between upper and lower adjacent wirings of an inductor using a multilayer wiring layer in an insulating film formed on a base substrate is reduced. An inductor is characterized by having one go-around of go-around wiring (A-B or B-C) formed in each of at least two of adjacent wiring layers of a plurality of wiring layers 18 placed in an insulating film 17 on a base substrate 16 , and in that one end (B) of the one go-around of go-around wiring (A-B and B-C) formed in each of the at least two of wiring layers is connected to each other at a via 2 and the one go-around of go-around wiring (A-B and B-C) formed in each of the at least two of wiring layers is placed at substantially the same position in a surface of the base substrate when viewed from an upper side of the base substrate.
1. An inductor comprising at least two four rolls of inductor placed in an insulating film formed on a base substrate,
wherein the inductor comprises a first inductor,
wherein the first inductor comprises a one go-around of a first go-around wiring and a one go-around of a second go-around wiring, the one go-around of the first go-around wiring and the one go-around of the second go-around wiring being formed in first and second wiring layers, respectively, of a plurality of wiring layers formed in the insulating film,
wherein the one go-around of the first go-around wiring formed in the first wiring layer and the one go-around of the second go-around wiring formed in the second wiring layer have one end connected to each other by a first via,
wherein the one go-around of the first go-around wiring formed in the first wiring layer and the one go-around of the second go-around wiring formed in the second wiring layer are placed at substantially the same position in a surface of the base substrate when viewed from an upper side of the base substrate,
wherein the first inductor further comprises a one go-around of a third go-around wiring formed in the second wiring layer, the one go-around of the third go-around wiring having one end directly connected, without use of any via, to another end of the one go-around of the second go-around wiring in the second wiring layer,
wherein the one go-around of the third go-around wiring is placed inside the one go-around of the first go-around wiring and the one go-around of the second go-around wiring in the second wiring layer when viewed from the upper side of the base substrate,
wherein the first inductor further comprises a one go-around of a fourth go-around wiring formed in the first wiring layer, the one go-around of the fourth go-around wiring having one end connected by a second via, to another end of the one go-around of the third go-around wiring,
wherein the one go-around of the fourth go-around wiring is placed inside the one go-around of the first go-around wiring and the one go-around of the second go-around wiring in the first wiring layer when viewed from the upper side of the base substrate, and
wherein the one go-around of the third go-around wiring formed in the second wiring layer and the one go-around of the fourth go-around wiring formed in the first wiring layer are placed at substantially the same position in the surface of the base substrate when viewed from the upper side of the base substrate.
2. The inductor as claimed in claim 1 , wherein each of a wiring interval between the one go-around of the second go-around wiring and the one go-around of the third go-around wiring in the second wiring layer and a wiring interval between the one go-around of the first go-around wiring and the one go-around of the fourth go-around wiring in the first wiring layer is larger than a wiring interval between the first and the second wiring layers.
3. The inductor as claimed in claim 1 , wherein a second inductor is placed in any of the plurality of wiring layers, and
wherein the first inductor and the second inductor are magnetically coupled.
4. The inductor as claimed in claim 3 , wherein the second inductor is placed outside or inside the first inductor when viewed from the upper side of the base substrate, or placed at substantially the same position as that of the first inductor.
5. The inductor as claimed in claim 3 , wherein inductance of the first inductor is larger than inductance of the second inductor.
6. The inductor as claimed in claim 3 , wherein wiring of the second inductor includes wiring formed in a wiring layer with the thickest film thickness of the plurality of wiring layers.
7. The inductor as claimed in claim 3 , wherein a wiring width of the first inductor is a wiring width of wiring of the second inductor or narrower.
8. The inductor as claimed in claim 3 , wherein wiring of the first inductor is formed in a wiring layer other than the wiring layer with the thickest film thickness of the plurality of wiring layers.
9. The inductor as claimed in claim 3 , wherein one terminal of a variable resistance element is connected to a start point of the first inductor, and the other terminal of the variable resistance element is connected to an end point of the first inductor.