Method for forming interlayer dielectric film, interlayer dielectric film, semiconductor device and semiconductor manufacturing apparatus

1. A method for forming an interlayer dielectric film by a plasma CVD method using a raw-material monomer with an unsaturated hydrocarbon, comprising:

forming the interlayer dielectric film in a film-forming chamber by the plasma CVD method using the raw-material monomer with the unsaturated hydrocarbon;

after the operation of forming the interlayer dielectric film, applying a surface treatment using a plasma of a first inert gas to a surface of the interlayer dielectric film in the film-forming chamber;

and then turning off a radio frequency power used for generation of the plasma of the first inert gas and purging the film-forming chamber with a second inert gas,

wherein during the operation of forming the interlayer dielectric film, a carrier gas is used to feed the raw-material monomer to the film-forming chamber,

wherein after the operation of forming the interlayer dielectric film, the surface treatment using the plasma of the first inert gas is subsequently applied in the film-forming chamber,

wherein only the raw-material monomer and a carrier gas are introduced into the film-forming chamber during the operation of forming the interlayer dielectric film, and the raw-material monomer and the carrier gas are introduced into the film-forming chamber via a raw-material supply valve,

wherein after forming the film, the introduction of the raw-material monomer and the carrier gas are stopped simultaneously,

wherein the flow rate of the second inert gas during the purging is controlled so that a residence time thereof is 0.8 seconds or less in the film-forming chamber,

wherein the raw-material monomer with the unsaturated hydrocarbon is selected from the group consisting of an organosiloxane having a 3-membered ring of SiO of Formula I, an organosiloxane having a 4-membered ring of SiO of Formula V, and an organosiloxane having a straight chain structure of SiO of Formula X:

wherein R1 is an unsaturated hydrocarbon; R2 is a saturated hydrocarbon or hydrogen;

wherein R3 is an unsaturated hydrocarbon; R4 is a saturated hydrocarbon;

wherein R5 is an unsaturated hydrocarbon; R6, R7, and R8 are each a saturated hydrocarbon.

2. The method for forming the interlayer dielectric film according to claim 1 ,

wherein the second inert gas is selected from the group consisting of helium, nitrogen, and argon.

3. The method for forming the interlayer dielectric film according to claim 1 ,

wherein the raw-material monomer with the unsaturated hydrocarbon is selected from the group consisting of an organosiloxane having a 3-membered ring of SiO of Formula 1:

wherein R1 is a vinyl group or an allyl group; and R2 is selected from the group consisting of a methyl group, an ethyl group, a propyl group, an isopropyl group, and a butyl group.

4. The method for forming the interlayer dielectric film according to claim 1 ,

wherein the raw-material monomer with the unsaturated hydrocarbon is selected from the group consisting of an organosiloxane having a 3-membered ring of SiO of Formula 2, Formula 3 and Formula 4:

5. The method for forming the interlayer dielectric film according to claim 1 ,

wherein the raw-material monomer with the unsaturated hydrocarbon is selected from the group consisting of an organosiloxane having a 4-membered ring of SiO of Formula 5:

wherein R3 is a vinyl group or an allyl group; and R4 is selected from the group consisting of a methyl group, an ethyl group, a propyl group, an isopropyl group, and a butyl group.

6. The method for forming the interlayer dielectric film according to claim 1 ,

wherein the raw-material monomer with the unsaturated hydrocarbon is selected from the group consisting of an organosiloxane having a 4-membered ring of SiO of Formula 6, Formula 7, Formula 8 and Formula 9:

7. The method for forming the interlayer dielectric film according to claim 1 ,

wherein the raw-material monomer with the unsaturated hydrocarbon is selected from the group consisting of an organosiloxane having a straight chain structure of SiO of Formula 10:

wherein R5 is a vinyl group or an allyl group; and R6, R7, and R8 are selected from the group consisting of a methyl group, an ethyl group, a propyl group, an isopropyl group and a butyl group.

8. The method for forming the interlayer dielectric film according to claim 1 ,

wherein the raw-material monomer with the unsaturated hydrocarbon is an organosiloxane having a straight chain structure of SiO of Formula 11:

9. The method for forming the interlayer dielectric film according to claim 1 ,

wherein the first inert gas and the second inert gas is supplied via a different route from a raw-material supply line.

10. The method for forming the interlayer dielectric film according to claim 1 ,

which uses a plasma polymerization reaction using a single raw-material monomer with an unsaturated hydrocarbon as a raw material, or a plasma polymerization reaction using two raw-material monomers with an unsaturated hydrocarbon as raw materials.

11. An interlayer dielectric film formed by the method of claim 1 , which is free of organic matter released at 120° C. according to a Thermal Desorption Spectroscopy TDS analysis.

12. A semiconductor device comprising an interlayer dielectric film, wherein the interlayer dielectric film is the dielectric film of claim 11 .

13. The method of the interlayer dielectric film according to claim 1 ,

wherein after the raw-material monomer and the carrier gas are stopped,

the surface treatment is applied using the plasma of the first inert gas.