Method of forming a porous insulation film

1. A method of forming an insulation film, said method using plasma reaction of a gas of a plurality of species of materials each having a cyclic organic silica structure to form an organic silica film, wherein said plurality of species of materials include a first material having in a main skeletal frame thereof a 3-membered SiO cyclic structure and a second material having in a main skeletal frame thereof a 4-membered SiO cyclic structure, wherein each Si atom of said 3-membered SiO cyclic structure of said first material is modified by the same one unsaturated hydrocarbon group and the same one saturated hydrocarbon group, and each Si atom of said 4-membered SiO cyclic structure of said second material is modified by the same one unsaturated hydrocarbon group and the same one saturated hydrocarbon group, and wherein a molar ratio of said first material to said second material is from 1:9 to 8:2.

2. The method of forming an insulation film according to claim 1 , wherein said first material and said second material are vaporized in different carburetors and introduced into a reaction chamber.

3. The method of forming insulation film according to claim 1 , wherein said first material and said second material are vaporized in the same carburetor and introduced into a reaction chamber.

4. The method of forming an insulation film according to claim 1 , wherein said first material includes a compound expressed by the following formula 1, wherein R 1 is a vinyl group, or allyl group, and R 2 is a methyl group, ethyl group, propyl group, isopropyl group, or butyl group,

5. The method of forming an insulation film according to claim 1 , wherein said first material includes at least one compound selected from a group consisting of compounds expressed by the following formulas 2, 3 and 5

6. The method of forming an insulation film according to claim 1 , wherein said second material includes a compound expressed by the following formula 6, wherein R 3 is a vinyl group, allyl group, or methylvinyl group, and R 4 is a methyl group, ethyl group, propyl group, isopropyl group, or butyl group,

7. The method of forming an insulation film according to claim 1 , wherein said second material includes at least one compound selected from a group consisting of compounds expressed by the following formulas 7 and 9,

8. An insulation film manufactured by the method according to claim 1 , wherein said insulation film includes therein at least amorphous carbon.

9. The semiconductor device comprising an insulation film according to claim 8 , wherein said amorphous carbon included in said insulation film has both a Sp2 structure and a Sp3 structure.

10. The semiconductor device according to claim 8 , wherein said insulation film includes at least two insulation layers formed from different ratios of said first material to second materials.

11. A method of forming an insulation film, said method using plasma reaction of a gas of at least one species of material having a cyclic organic silica structure and a gas of at least one species of material having a straight-chain organic silica structure to form an organic silica film, wherein said material having said organic cyclic silica structure includes a first material having a 3-membered SiO cyclic structure in a skeletal frame thereof, and said material having said straight-chain organic silica structure includes a second material having a straight-chain organic silica structure in a skeletal frame thereof, wherein each Si atom of said 3-membered SiO cyclic structure of said first material is modified by the same one unsaturated hydrocarbon group and the same one saturated hydrocarbon group, wherein said second material has a composition ratio of H/C≧1.6, C/Si≧5, H/Si≧8, and wherein said straight-chain organic silica of said second material is modified by the same side chains as present on Si atoms of said 3-membered SiO cyclic structure.

12. The method of forming an insulation film according to claim 2 , wherein said second material includes a compound expressed by the following formula 11, wherein R 5 is a vinyl group or allyl group, and R 6 , R 7 and R 8 are each independently a methyl group, ethyl group, propyl group, isopropyl group, or butyl group:

13. The method of forming an insulation film according to claim 2 , wherein said second material includes a compound expressed by the following formula 12:

14. The method of forming an insulation film according to claim 2 , wherein said first material and said second material are vaporized in different carburetors and introduced into a reaction chamber.

15. The method of forming insulation film according to claim 2 , wherein said first material and said second material are vaporized in the same carburetor and introduced into a reaction chamber.

16. The method of forming an insulation film according to claim 2 , wherein said first material includes a compound expressed by the following formula 1, wherein R 1 is a vinyl group or allyl group, and R 2 is a methyl group, ethyl group, propyl group, isopropyl group, or butyl group,

17. The method of forming an insulation film according to claim 2 , wherein said first material includes at least one compound selected from a group consisting of compounds expressed by the following formulas 2, 3 and 5:

18. An insulation film manufactured by the method according to claim 2 , wherein said insulation film includes therein at least amorphous carbon.

19. The semiconductor device comprising an insulation film according to claim 18 , wherein said amorphous carbon included in said insulation film has both a Sp2 structure and a Sp3 structure.

20. The semiconductor device according to claim 18 , wherein said insulation film includes at least two insulation layers formed from different ratios of said first material to second materials.