Ion beam processing method
View Patent ↗When scanning by an ion beam in advance an area 24 including a reference hole 23 formed at a position other than the area to be processed 25 of a light-shielding film 21 on a glass substrate 22 , a secondary ion signal of the same atom as the incident ions injected into the substrate is detected instead of detecting the secondary ion signal of the atoms included in the base film, and the position 23 of the hole is stored. Then, the area 24 including the hole formed during the processing is scanned and the secondary ion signal of the same atom as the incident ions is detected to determine the current position 26 of the hole, the position of the hole obtained by the previous detection and the current position of the hole are compared, and the amount of shift of the position of the hole is determined. This shifted amount is regarded as the drift amount.
1. An ion beam processing method comprising steps of: forming a minute reference hole in an area of a sample other than the area to be processed in advance before performing processing by a focused ion beam; scanning the area including the formed reference hole before processing the desired area and also midway during processing of the same; calculating the amount of shift of the position of the reference hole based on the secondary ion image of the same atom as the incident ion beam; and correcting the ion beam irradiation position based on the shift amount, thereby processing while correcting for the drift of the ion beam irradiation position during processing.
2. An ion beam processing method comprising steps of: forming a characteristic pattern in an area on the sample other than the area to be processed in advance before performing processing by a focused ion beam; scanning the area including the formed characteristic pattern before processing the area to be processed and also midway during processing of the same; calculating the amount of shift by performing pattern matching with the secondary ion image of the same atom as the incident ion beam; and correcting the ion beam irradiation position based on the shift amount, thereby processing while correcting for the drift of the ion beam irradiation position during processing.