Semiconductor device having a mis-type fet, and methods for manufacturing the same and forming a metal oxide film
View Patent ↗[Problems] To provide a semiconductor device including a MIS-type FET having an excellent characteristic of low leakage current despite use of a high-K material of a high dielectric constant in a gate insulating film. [Means for solving Problems] A MIS-type field-effect-transistor (FET) including: a silicon substrate ( 1 ); an insulating film ( 6 ) formed on the silicon substrate and containing silicon and at least one of nitrogen and oxygen; a metal oxide film formed on the insulating film and containing silicon and hafnium; and a gate electrode formed on the metal oxide film, wherein a silicon molar ratio (Si/(Si+Hf)) in the meal oxide film is in the range of 2 to 15%.
1. A semiconductor device comprising a MIS-type field-effect-transistor (FET), said MIS-type FET including:
a silicon substrate;
an insulating film formed on said silicon substrate and containing silicon and at least one of nitrogen and oxygen;
a metal oxide film formed on said insulating film and containing silicon and hafnium; and
a gate electrode formed on said metal oxide film, wherein:
a silicon molar ratio (Si/(Si+Hf)) in said metal oxide film is not lower than 2% and not higher than 15% and
said metal oxide film has a dielectric constant in a range from about 20 to about 24.
2. The semiconductor device according to claim 1 , wherein said metal oxide film includes therein polycrystalline particles having diameters of not smaller than 30 nm and smaller than 100 nm.
3. The semiconductor device according to claim 1 , wherein said MIS-type FET has a silicon nitride film on said metal oxide film.
4. The semiconductor device according to claim 1 , wherein said dielectric constant of said metal oxide film is about 24.
5. The semiconductor device according to claim 1 , wherein crystal grains of said metal oxide film are substantially free of the silicon.
6. The semiconductor device according to claim 5 , wherein the silicon is located substantially at grain boundaries of the crystal grains.
7. The semiconductor device according to claim 5 , wherein said crystal grains are HfO 2 crystals.
8. The semiconductor device according to claim 5 , wherein said crystal grains have diameters in a range from about 30 nm to about 100 nm.