Electronic device, assembly and methods of manufacturing an electronic device including a vertical trench capacitor and a vertical interconnect
View Patent ↗A semiconductor substrate comprises both vertical interconnects and vertical capacitors with a common dielectric layer. The substrate can be suitably combined with further devices to form an assembly. The substrate can be made in etching treatments including a first step on the one side, and then a second step on the other side of the substrate.
1. An electronic device comprising a semiconductor substrate having a first side and a second side; a vertical trench capacitor on the first side of the substrate, the vertical trench capacitor including a plurality of trenches in which dielectric material is present between first and second conductive surfaces; a vertical interconnect that extends through the substrate from the first side to the second side, the vertical interconnect being insulated from the substrate by dielectric material, the dielectric material of the vertical interconnect and the dielectric material of the vertical trench capacitor being a common material formed from a single deposition layer; wherein the substrate comprises a high-ohmic zone which is present adjacent to the vertical capacitors and acts as a protection against parasitic currents; and a planar capacitor on the first side of the substrate, the planar capacitor including dielectric material formed from the common material of the single deposition layer, and wherein the high-ohmic zone separates the planar capacitor from the vertical trench capacitor.
2. The electronic device as claimed in claim 1 , wherein the vertical interconnect includes a plurality of parallel trenches each of which is substantially filled with an electrically conductive material, the dielectric material of the vertical interconnect being in direct contact with the semiconductor substrate in which the vertical trench capacitor is formed, along a sidewall of the vertical interconnect.
3. The electronic device as claimed in claim 1 , wherein
contact pads for coupling to an external carrier are present on the second side;
a first vertical interconnect is used for grounding and
a second vertical interconnect is used for signal transmission.
4. The electronic device as claimed in claim 3 , wherein the first and second vertical interconnects are designed so as to form a coaxial structure.
5. An assembly comprising the electronic device of claim 1 , and a semiconductor device, where the semiconductor device is electrically connected to bond pads present on the first side of the substrate.
6. The electronic device as claimed in claim 1 , wherein the dielectric material of the vertical trench capacitor and the dielectric material of the vertical interconnect are formed by depositing a layer of dielectric material on the substrate and partially etching the deposited layer of dielectric material.
7. The electronic device as claimed in claim 1 , wherein the vertical interconnect is substantially filled with a conductive material, the conductive material of the vertical interconnect and the second conductive surface of the vertical trench capacitor being formed from a common material of a single deposition layer of conductive material.
8. An electronic device comprising:
a semiconductor substrate having a first side and a second side;
a vertical trench capacitor on the first side of the substrate, the vertical trench capacitor including a plurality of trenches in which a dielectric material is present between first and second conductive surfaces; and
a vertical interconnect that extends through the substrate from the first side to the second side, the vertical interconnect being insulated from the substrate by a dielectric material, the dielectric material of the vertical interconnect and the dielectric material of the vertical trench capacitor being a common material formed from a single deposition layer, the vertical interconnect having a first part and a second part, where the first part is exposed on the first side of the substrate, is narrower than the second part and has a substantially cylindrical shape.
9. The electronic device as claimed in claim 8 , wherein the first part of the vertical interconnect comprises a plurality of parallel through-holes that extend from the first side of the substrate to the second part of the vertical interconnect, each of the plurality of parallel through-holes being substantially filled with an electrically conductive material.
10. An electronic device comprising: a semiconductor substrate having a first side and a second side; a vertical trench capacitor on the first side of the substrate, the vertical trench capacitor including a plurality of trenches in which dielectric material is present between first and second conductive surfaces; and a vertical interconnect that extends through the substrate from the first side to the second side, the vertical interconnect being insulated from the substrate by dielectric material, the dielectric material of the vertical interconnect and the dielectric material of the vertical trench capacitor being common material formed from a single deposition layer, wherein the dielectric material extends over surfaces on both the first side and second side of the substrate.