High purity zinc oxide powder and method for production thereof, and high purity zinc oxide target and thin film of high purity zinc oxide
View Patent ↗Provided is a manufacturing method of high purity oxide powder including the steps of subjecting a raw material such as Zn-containing scrap to acid leaching or electrolytic extraction, thereafter performing solvent extraction and activated carbon treatment thereto in order to remove impurities, neutralizing the resultant solution freed of impurities with an alkaline solution to obtain zinc hydroxide, and firing the zinc hydroxide to obtain zinc oxide. Provided are high purity zinc oxide efficiently freed of impurities, in particular C, Cl, S and Pb impurities, at low cost and the manufacturing method thereof; a target manufactured by firing the high purity zinc oxide; and a high purity zinc oxide thin film obtained by the sputtering the target.
1. High purity zinc oxide powder having an impurity content excluding gas components of N, C, Cl, S and P of less than 10 wtppm, a total content of gas components of C, Cl and S of less than 100 wtppm, a content of Na of 1 wtppm or less, and a content of K of 1 wtppm or less.
2. High purity zinc oxide powder according to claim 1 , wherein said powder has an impurity content of Pb of less than 5 wtppm.
3. High purity zinc oxide powder according to claim 2 , wherein said powder has a content of Mg and Al of less than 1 wtppm, respectively.
4. High purity zinc oxide powder according to claim 1 , wherein said powder has a content of Mg and Al of less than 1 wtppm, respectively.
5. A high purity zinc oxide powder according to claim 1 , produced by a process comprising the steps of subjecting a raw material such as Zn-containing scrap to acid leaching or electrolytic extraction, thereafter performing solvent extraction and activated carbon treatment thereto in order to remove impurities, neutralizing the resultant solution freed of impurities with an alkaline solution to obtain zinc hydroxide, and firing the zinc hydroxide to obtain zinc oxide.
6. A manufacturing method of high purity zinc oxide powder including the steps of subjecting a raw material such as Zn-containing scrap to acid leaching with nitric acid or electrolytic extraction with ammonium nitrate solution, thereafter performing solvent extraction and activated carbon treatment thereto in order to remove impurities, neutralizing the resultant solution freed of impurities with ammonium hydroxide to obtain zinc hydroxide, and firing the zinc hydroxide to obtain zinc oxide.
7. A method according to claim 6 , wherein the grain size of the zinc oxide powder produced by the method is 0.1 to 100 μm.
8. A method according to claim 6 , wherein the zinc oxide powder produced by the method has an impurity content of N, C, Cl, S and P, excluding gas components, of less than 10 wtppm and a total content of gas components C, Cl and S of less than 100 wtppm.
9. A high purity zinc oxide sputtering target having an impurity content of N, C, CI, S and P, excluding gas components, of less than 10 wtppm, a total content of gas components C, Cl and S of less than 100 wtppm, a content of Na of 1 wtppm or less, and a content of K of 1 wtppm or less.
10. A sputtering target according to claim 9 , wherein said zinc oxide target has a crystal grain size of 100 μm or less.
11. A sputtering target according to claim 9 , wherein said target has a content of Mg and Al of less than 1 wtppm, respectively.
12. A sputtering target according to claim 9 , wherein said target has an impurity content of Pb of less than 5 wtppm.
13. A sputtering target according to claim 12 , wherein said target has a content of Mg and Al of less than 1 wtppm, respectively.
14. A sputtering target according to claim 13 , wherein said zinc oxide target has a crystal grain size of 100 μm or less.
15. A high purity zinc oxide thin film having an impurity content of N, C, Cl, S and P, excluding gas components, of less than 10 wtppm, a total content of gas components C, Cl and S of less than 100 wtppm, a content of Na of 1 wtppm or less, and a content of K of 1 wtppm or less.
16. A thin film according to claim 15 , wherein said zinc oxide thin film has a crystal grain size of 100 μm or less.
17. A thin film according to claim 15 , wherein said thin film has a content of Mg and Al of less than 1 wtppm, respectively.
18. A thin film according to claim 15 , wherein said thin film has an impurity content of Pb of less Than 5 wtppm.
19. A thin film according to claim 18 , wherein said thin film has a content of Mg and Al of less than 1 wtppm, respectively.
20. A thin film according to claim 19 , wherein said zinc oxide thin film has a crystal grain size of 100 μm or less.