Patent Assignment
Reel/Frame 026417/0023
Change of Name/Merger
Recorded: 2011-06-09
Received: 2011-06-09
Pages: 34
Assignor
NIPPON MINING & METALS CO., LTD.
Executed: 2010-12-21
Assignee
JX NIPPON MINING & METALS CORPORATION
6-3, OTEMACHI 2-CHOME, CHIYODA-KU, TOKYO, JPX, JAPAN
Covered Properties
(100)
Hafnium Silicide Target for Forming Gate Oxide Film, and Method for Preparation Thereof
Application:
12/396,716 →
Highly Pure Hafnium Material, Target and Thin Film Comprising the Same and Method for Producing Highly Pure Hafnium
Application:
12/353,405 →
Zinc Oxide-Based Transparent Conductor and Sputtering Target for Forming the Transparent Conductor
Application:
12/282,933 →
Substrate for Growing Compound Semiconductor and Epitaxial Growth Method
Application:
12/223,453 →
Sputtering Target, Thin Film for Optical Information Recording Medium and Process for Producing the Same
Application:
12/178,957 →
Method for Operating Non-Ferrous Smelting Plant
Application:
12/216,176 →
Gallium Oxide/Zinc Oxide Sputtering Target, Method of Forming Transparent Conductive Film and Transparent Conductive Film
Application:
12/094,024 →
Method for Analyzing Minute Amounts of Pd, Rh and Ru, and High-Frequency Plasma Mass Spectroscope Used for Same
Application:
12/068,860 →
Iron-Based Sintered Compact and Method for Production Thereof
Application:
12/024,232 →
Method for Producing Ammonium Hexachlororuthenate and Ruthenium Powder, as Well as Ammonium Hexachlororuthenate
Application:
12/010,616 →
Electroless Palladium Plating Liquid
Application:
11/988,353 →
Gallium Oxide-Zinc Oxide Sputtering Target, Method of Forming Transparent Conductive Film, and Transparent Conductive Film
Application:
11/994,025 →
Gallium Oxide-Zinc Oxide Sputtering Target, Method for Forming Transparent Conductive Film, and Transparent Conductive Film
Application:
11/993,944 →
Method for Producing Znte System Compound Semiconductor Single Crystal, Znte System Compound Semiconductor Single Crystal, and Semiconductor Device
Application:
11/984,942 →
Method for Producing Znte System Compound Semiconductor Single Crystal, Znte System Compound Semiconductor Single Crystal, and Semiconductor Device
Application:
11/984,944 →
Method for Producing Znte System Compound Semiconductor Single Crystal, Znte System Compound Semiconductor Single Crystal, and Semiconductor Device
Application:
11/984,941 →
Method of Co-Doping Group 14 (4B) Elements to Produce Znte System Compound Semiconductor Single Crystal
Application:
11/984,943 →
Method for Leaching Gold
Application:
11/896,747 →
Taphole Cooling Structure
Application:
11/754,988 →
Cdte System Compound Semiconductor Single Crystal
Application:
11/667,676 →
Method for Recovering Rhodium and Silver from Hydrochloric Acid
Application:
11/730,125 →
Manganese Alloy Sputtering Target and Method for Producing the Same
Application:
11/687,765 →
Determination Method and Processing Method of Machined Surface of Plate-Like Material, and Apparatus for Use in Said Methods
Application:
11/574,629 →
Method for Growing Epitaxial Crystal
Application:
11/661,696 →
Metallic Powder for Powder Metallurgy Whose Main Component Is Iron and Iron-Based Sintered Body
Application:
11/574,294 →
Metallic Powder for Powder Metallurgy Whose Main Component Is Iron and Iron-Based Sintered Body
Application:
11/574,275 →
Electroless Gold Plating Solution
Application:
11/632,815 →
Wafer Storage Container
Application:
11/596,681 →
Sputtering Target for Phase-Change Memory, Film for Phase Change Memory Formed by Using the Target, and Method for Producing the Target
Application:
11/533,945 →
Tantalum Sputtering Target and Method for Preparation Thereof
Application:
11/533,044 →
Tantalum Sputtering Target and Method for Preparation Thereof
Application:
11/533,092 →
High- Purity Ru Powder, Sputtering Target Obtained by Sintering the Same, Thin Film Obtained by Sputtering the Target and Process for Producing High-Purity Ru Powder
Application:
10/598,471 →
Vapor Phase Growth Apparatus
Application:
10/589,348 →
Copper Foil Having Blackened Surface or Layer
Application:
10/597,460 →
Surface-Treating Agent for Metal
Application:
10/587,003 →
Pretreating Agent for Electroless Plating, Method of Electroless Plating Using the Same and Product of Electroless Plating
Application:
10/586,379 →
Basic Silane Coupling Agent Organic Carboxylate Composition, Method for Producing the Same, and Epoxy Resin Composition Containing the Same
Application:
11/444,728 →
Nickel Alloy Sputtering Target and Nickel Alloy Thin Film
Application:
10/575,888 →
High Purity Zinc Oxide Powder and Method for Production Thereof, and High Purity Zinc Oxide Target and Thin Film of High Purity Zinc Oxide
Application:
10/572,328 →
Electroless Gold Plating Solution
Application:
10/570,394 →
Ito Sputtering Target
Application:
10/569,068 →
High Purity Copper Sulfate and Method for Production Thereof
Application:
10/566,750 →
Target of High-Purity Nickel or Nickel Alloy and Its Producing Method
Application:
11/332,045 →
Electroless Gold Plating Liquid
Application:
10/558,173 →
Sputtering Target and Process for Producing the Same
Application:
10/547,816 →
Copper Alloy Sputtering Target Process for Producing the Same and Semiconductor Element Wiring
Application:
10/549,440 →
Electroless Gold Plating Liquid
Application:
10/549,537 →
Hafnium Alloy Target and Process for Producing the Same
Application:
10/548,347 →
Sputtering Target, Thin Film for Optical Information Recording Medium and Process for Producing the Same
Application:
10/547,815 →
Copper Electrolytic Solution Containing Amine Compound Having Specific Skeleton and Organosulfur Compound as Additives, and Electrolytic Copper Foil Produced Using the Same
Application:
11/187,282 →
Epitaxial Growth Method and Substrate for Epitaxial Growth
Application:
10/534,695 →
Ii-Vi Compound Semiconductor Crystal and Photoelectric Conversion Device
Application:
11/115,182 →
Ta Sputtering Target and Method for Preparation Thereof
Application:
10/532,473 →
Copper Alloy Sputtering Target and Semiconductor Element Wiring
Application:
10/530,438 →
Iron Silicide Powder and Method for Production Thereof
Application:
10/527,319 →
Iron-Based Sintered Compact and Method for Production Thereof
Application:
10/526,295 →
Electroconductive Oxide Sintered Compact, Sputtering Target Comprising the Sintered Compact and Methods for Producing Them
Application:
10/522,263 →
Vapor-Phase Epitaxial Apparatus and Vapor Phase Epitaxial Method
Application:
10/515,969 →
Vapor-Phase Growth Apparatus
Application:
10/515,970 →
Metal Powder for Powder Metallurgy and Iron-Based Sintered Compact
Application:
10/514,274 →
Tantalum Sputtering Target and Method for Preparation Thereof
Application:
10/514,955 →
Cdte Single Crystal and Cdte Polycrystal, and Method for Preparation Thereof
Application:
10/505,588 →
Crystal Manufacturing Method
Application:
10/504,527 →
Sputtering Target for Phase-Change Memory, Film for Phase Change Memory Formed by Using the Target, and Method for Producing the Target
Application:
10/504,739 →
High Purity Electrolytic Copper and Its Production Method
Application:
10/915,401 →
Sputtering Target Containing Zinc Sulfide as Major Component, Optical Recording Medium on Which Phase Change Optical Disk Protective Film Containing Zinc Sulfide as Major Component Is Formed by Using the Target, and Method for Manufacturing the Sputtering Target
Application:
10/503,296 →
Electrolytic Method in Diaphragm-Type Cell
Application:
10/896,965 →
Production Method for Compound Semiconductor Single Crystal
Application:
10/502,228 →
Target of High-Purity Nickel or Nickel Alloy and Its Producing Method
Application:
10/498,147 →
Method for Connecting Magnetic Substance Target to Backing Plate, and Magnetic Substance Target
Application:
10/498,146 →
Process for Producing Single Crystal of Compound Semiconductor and Crystal Growing Apparatus
Application:
10/497,916 →
Method for producing ZnTe system compound semiconductor single crystal, ZnTe system compound semiconductor single crystal, and semiconductor device
Application:
10/472,446 →
Hafnium Silicide Target and Manufacturing Method for Preparation Thereof
Application:
10/487,400 →
Copper Electroplating Method, Pure Copper Anode for Copper Electroplating, and Semiconductor Wafer Plated Thereby with Little Particle Adhesion
Application:
10/486,078 →
Cdte-Base Compound Semiconductor Single Crystal for Electro-Optic Element
Application:
10/771,359 →
Method of Separating and Processing Catalyst Carriers
Application:
10/771,336 →
Surface Treated Copper Film
Application:
10/486,274 →
Metal Plating Method, Pretreatment Agent, and Semiconductor Wafer and Semiconductor Device Obtained Using These
Application:
10/767,697 →
High-Strength, High Conductivity Copper Alloy Exellent in Fatigue and Intermediate Temperature Properties
Application:
10/759,217 →
Method for Preparing Gan Based Compound Semiconductor Crystal
Application:
10/481,253 →
Copper Electrolytic Solution Containing Organic Sulfur Compound and Quaternary Amine Compound of Specified Skeleton as Additives and Electrolytic Copper Foil Produced Therewith
Application:
10/480,710 →
Solid Silane Coupling Agent Composition, Process for Producing the Same, and Resin Composition Containing the Same
Application:
10/480,712 →
Hafnium Silicide Target for Forming Gate Oxide Film and Method for Preparation Thereof
Application:
10/480,319 →
Copper Electrolytic Solution Containing Amine Compound Having Specific Skeleton and Organosulfur Compound as Additives, and Electrolytic Copper Foil Produced Using the Same
Application:
10/479,896 →
Electrolytic Copper Plating Method, Phosphorus-Containing Anode for Electrolytic Copper Plating, and Semiconductor Wafer Plated Using Them and Having Few Particles Adhering to It
Application:
10/478,750 →
Manganese Alloy Sputtering Target and Method for Producing the Same
Application:
10/474,451 →
Chamfered Semiconductor Wafer and Method of Manufacturing the Same
Application:
10/472,518 →
Electroless Plating Method and Semiconductor Wafer on Which Metal Plating Layer Is Formed
Application:
10/472,678 →
Method for Producing High Purity Nickle, High Purity Nickle, Sputtering Target Comprising the High Purity Nickel, and Thin Film Formed by Using Said Spattering Target
Application:
10/471,112 →
Sputtering Target Producing Very Few Particles, Backing Plate or Apparatus Within Spruttering Device and Roughening Method by Electric Discharge Machining
Application:
10/467,809 →
Organic Carboxylic Acid Salt Composition, Process for Preparation Thereof and Additives for Epoxy Resins
Application:
10/451,977 →
Basic Silane Coupling Agent Organic Carboxylate Composition, Method for Producing the Same, and Epoxy Resin Composition Containing the Same
Application:
10/450,421 →
Carrier-Attached Copper Foil and Printed Board Using the Copper Foil
Application:
10/432,517 →
Surface Treatment for Copper Foil
Application:
10/362,953 →
MOSI2 Arc-Shaped Heater, and Method and Device for Manufacturing the Heater
Application:
10/399,896 →
Sputtering Target Producing Few Particles
Application:
10/297,265 →
''A Ii-Vi Compound Seminconductor Crystal
Application:
10/381,880 →
Hafnium Silicide Target for Gate Oxide Film Formation and Its Production Method
Application:
10/362,044 →
Electrolytic Copper Plating Method, Phosphorous Copper Anode for Electrolytic Plating Method, and Semiconductor Wafer Having Low Particle Adhesion Plated with Said Method and Anode
Application:
10/362,152 →
Sputtering Target Producing Few Particles, Backing Plate or Sputtering Apparatus and Sputtering Method Producing Few Particles
Application:
10/297,232 →