Vapor-phase growth apparatus
View Patent ↗A vapor-phase growth apparatus includes: at least a reaction furnace which is hermetically closable, a wafer container which is disposed in the reaction furnace, for disposing a wafer at a predetermined position, a gas supply member for supplying a source gas toward the wafer, and a heating member for heating the wafer, wherein the apparatus is designed to form a grown film on a front surface of the wafer by supplying the source gas in a high temperature state while the heating member heats the wafer in the reaction furnace through the wafer container. The wafer container is made of a single material or a single member, and has a ratio R 2 /R 1 , which is not less than 0.4 to not more than 1.0, where R 1 is a heat resistance for a heat transfer route from a rear surface of the wafer container toward the front surface of the wafer, and R 2 is a heat resistance for a heat transfer route from the rear surface of the wafer container toward a front surface of the wafer container.
1. A vapor-phase growth apparatus comprising:
a reaction furnace which can be hermetically closed,
a wafer container which is disposed in the reaction furnace, for disposing a wafer at a predetermined position,
a gas supply member for supplying a source gas toward the wafer, and
a heating member for heating the wafer,
wherein
the apparatus is designed to form a grown film on a front surface of the wafer by supplying the source gas in a high temperature state while the heating member heats the wafer through the wafer container in the reaction furnace,
the wafer container is made of a single material or a single member,
a pocket hole in which the wafer is disposed is formed on a front surface of the wafer container,
the wafer is disposed in said pocket hole, and
a ratio R 2 /R 1 is not less than 0.4 to not more than 1.0, where R 1 is a heat resistance for a heat transfer route from a rear surface of the wafer container toward the front surface of the wafer, and R 2 is a heat resistance for a heat transfer route from the rear surface of the wafer container toward a front surface of the wafer container.
2. The vapor-phase growth apparatus as claimed in claim 1 , where in the wafer container is made of a material having a coefficient of thermal conductivity which is not less than 0.5 times that of the wafer and not more than 2 times that of the wafer.
3. The vapor-phase growth apparatus as claimed in claim 1 , wherein the wafer container is made of amorphous carbon.
4. The vapor-phase growth apparatus as claimed in claim 2 , wherein the wafer container is made of amorphous carbon.